Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

GOA circuit and display panel

A circuit and potential technology, applied in the field of GOA circuit and display panel, can solve the problem of unstable output of GOA circuit, and achieve the effect that is conducive to stability

Pending Publication Date: 2022-01-04
SHENZHEN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
View PDF6 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The embodiment of the present application provides a GOA circuit and a display panel to solve the technical problem of unstable output of the GOA circuit in the prior art

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • GOA circuit and display panel
  • GOA circuit and display panel
  • GOA circuit and display panel

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0041] The following will clearly and completely describe the technical solutions in the embodiments of the application with reference to the drawings in the embodiments of the application. Apparently, the described embodiments are only some of the embodiments of the application, not all of them. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without making creative efforts belong to the scope of protection of this application.

[0042] The transistors used in all embodiments of this application can be thin film transistors or field effect transistors or other devices with the same characteristics. Since the source and drain of the transistors used here are symmetrical, their source and drain can be interchanged. of. In the embodiment of the present application, in order to distinguish the two poles of the transistor except the gate, one pole is called the source, and the other pole is called the drain. According to th...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The embodiment of the invention provides a GOA circuit and a display panel. A compensation module is adopted to detect the threshold voltage of the switch thin film transistor in the random logic address selection module in the shutdown stage, and then the detected threshold voltage is compensated to the previous level transmission signal; therefore, the influence of threshold voltage offset of a switching thin film transistor in the random logic address selection module on the charging rate of the node Q can be avoided, the transmission capability of the thin film transistor cannot be reduced, and the output stability of the GOA circuit is further facilitated.

Description

technical field [0001] The present application relates to the field of display technology, in particular to a GOA circuit and a display panel. Background technique [0002] Array substrate gate drive technology (Gate Driver Array, referred to as GOA), is to integrate the gate drive circuit on the array substrate of the display panel to realize the driving method of progressive scanning, so that the gate drive circuit part can be saved, and it has the advantages of The advantages of reducing production cost and realizing narrow bezel design of the panel are used for various displays. [0003] Wherein, in the random detection type GOA circuit, the node M that maintains the gate voltage of the switching thin film transistor in the random logic addressing module maintains a high potential most of the time. Studies have shown that when the thin film transistor is turned on most of the time, the thin film transistor will be forward biased, causing the threshold voltage to be posi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G09G3/20
CPCG09G3/20
Inventor 薛炎
Owner SHENZHEN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products