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A kind of preparation method of silicon carbide powder for electronic packaging

A technology of silicon carbide powder and electronic packaging, applied in chemical instruments and methods, carbon compounds, inorganic chemistry, etc., can solve the problem of small particle size of silicon carbide, achieve the effect of small particle size, simple steps, and reduce the entry of impurities

Active Publication Date: 2022-07-19
连云港市沃鑫高新材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Aiming at the problems in the prior art, the present invention provides a method for preparing silicon carbide powder for electronic packaging, which solves the problems of the existing technology, and uses simple and easy-to-obtain raw materials, which is conducive to reducing costs, and at the same time, the steps are simple and operable Strong, and the prepared silicon carbide particle size is small, and the particle size distribution is uniform, and the amount of impurities is small

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] A preparation method of silicon carbide powder for electronic packaging, comprising the following steps:

[0023] Step 1, the pre-treatment method of the activated alumina block, including: c1, adding the activated alumina block into the reaction kettle, feeding the ether gas, and then cooling down to form a liquid-film alumina block, the introduction speed of the ether gas The temperature is 10 mL / min, the temperature is 50 °C, and the cooling temperature is 5 °C; c2, slowly put the liquid film alumina block into ethanol and stir evenly, and then heat up for 2 hours to obtain an activated alumina block with a clean surface. The temperature of the heating treatment is 50°C, c3, the activated alumina treated by c2 is dried at a constant temperature to obtain an activated alumina block, and the temperature of the constant temperature drying is 70°C; the activated alumina block is put into the reaction kettle , and feed silicon chloride gas under an inert gas atmosphere, l...

Embodiment 2

[0030] A preparation method of silicon carbide powder for electronic packaging, comprising the following steps:

[0031] Step 1, the pre-treatment method of the activated alumina block, including: c1, adding the activated alumina block into the reaction kettle, feeding the ether gas, and then cooling down to form a liquid-film alumina block, the introduction speed of the ether gas The temperature is 20 mL / min, the temperature is 60 °C, and the cooling temperature is 10 °C; c2, slowly put the liquid film alumina block into ethanol and stir evenly, and then heat up for 5 hours to obtain an activated alumina block with a clean surface. The temperature of the heating treatment is 60°C, c3, the activated alumina treated by c2 is dried at a constant temperature to obtain an activated alumina block, and the temperature of the constant temperature drying is 100°C; the activated alumina block is put into the reaction kettle , and feed silicon chloride gas under an inert gas atmosphere,...

Embodiment 3

[0038] A preparation method of silicon carbide powder for electronic packaging, comprising the following steps:

[0039] Step 1, the pre-treatment method of the activated alumina block, including: c1, adding the activated alumina block into the reaction kettle, feeding the ether gas, and then cooling down to form a liquid-film alumina block, the introduction speed of the ether gas The temperature is 15 mL / min, the temperature is 55 °C, and the temperature for cooling is 8 °C; c2, slowly put the liquid film alumina block into ethanol and stir evenly, and then heat up for 4 hours to obtain an activated alumina block with a clean surface. The temperature of the heating treatment is 55°C, c3, the activated alumina treated by c2 is dried at a constant temperature to obtain an activated alumina block, and the temperature of the constant temperature drying is 90°C; the activated alumina block is put into the reaction kettle , and pass into silicon chloride gas under an inert gas atmo...

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Abstract

The invention belongs to the technical field of silicon carbide, and in particular relates to a method for preparing silicon carbide powder for electronic packaging. Using activated alumina as a substrate, through adsorption deposition and vapor deposition, silicon carbide-based alumina is obtained, and the substrate is removed to obtain Silicon carbide powder. The present invention solves the problems of the prior art, adopts simple and easy-to-obtain raw materials, is conducive to cost reduction, and simultaneously has simple steps and strong operability.

Description

technical field [0001] The invention belongs to the technical field of silicon carbide, and in particular relates to a preparation method of silicon carbide powder for electronic packaging. Background technique [0002] With the rapid development of the information industry and the advancement of microelectronics technology, new electronic components are developing in the direction of high voltage resistance, large capacity, high frequency, high reliability and high integration. Silicon nitride has a wide band gap and high thermal conductivity. , high breakdown electric field, high radiation resistance and other characteristics, become the representative of the third generation of wide bandgap semiconductor materials. [0003] At present, physical vapor deposition (PVT) is the main growth method for SiC single crystal growth, which has been proved to be the most mature method for growing SiC crystals. Using high-purity SiC powder with suitable bulk density as the source, th...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B32/963
CPCC01B32/963C01P2004/61C01P2006/80
Inventor 黄威徐天兵刘峰黄叶任韩平左立杰
Owner 连云港市沃鑫高新材料有限公司