Unlock instant, AI-driven research and patent intelligence for your innovation.

Bipolar SCR

A semiconductor and rectifier technology, applied in the field of bipolar-based semiconductor controllable rectifiers, which can solve problems such as high leakage and low solution efficiency

Pending Publication Date: 2022-01-11
TEXAS INSTR INC
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Non-SCR based solutions are inefficient while existing SCR designs suffer from high leakage due to punch-through issues

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Bipolar SCR
  • Bipolar SCR
  • Bipolar SCR

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0015] In the drawings, like references indicate similar elements. References to "an" or "one" embodiment in this description are not necessarily to the same embodiment, and such references may mean at least one. In addition, if a particular feature, structure or characteristic is described in connection with an embodiment, then such feature, structure or characteristic is described in conjunction with other embodiments whether explicitly described or not.

[0016] Examples described include SCRs that contain barrier junctions to prevent punch through. The barrier junction is constructed by modifying the collector settling area and introducing an anodic junction under the modified settling to achieve SCR action. Modified sinking can be used to vary the trigger / hold current of the SCR, and the configuration allows independent modification of the trigger current while maintaining immunity to PNP injection from the substrate.

[0017] FIG. 9 shows a cross-sectional view of a co...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The embodiment of the application relates to a bipolar SCR. In described examples, a high-voltage bipolar semiconductor controlled rectifier SCR (100) includes: an emitter region (102) having a first polarity and overlying a base region (104) having a second polarity different from the first polarity; a collector region (106, 108) having the first polarity and lying under the base region (104); an anode region (114, 116, 120) having the second polarity; a first sinker region (118) having the first polarity and contacting the collector region (106, 108), wherein the anode region (114, 116, 120) is between the first sinker region (118) and the base region (104); and a second sinker region (112) having the first polarity and contacting the collector region (106, 108, 110), the second sinker region (112) lying between the anode region (114, 116, 120) and the base region (104), wherein an extension (120) of the anode region (114, 116, 120) extends under a portion of the second sinker region (112).

Description

[0001] Information about divisional applications [0002] This application is a divisional application of an invention patent application named "Bipolar Semiconductor Controllable Rectifier", application number 201780028526.2, and application date April 3, 2017. technical field [0003] This relates generally to integrated circuit design, and more specifically, to implementing bipolar-based semiconductor controlled rectifiers for electrostatic discharge protection circuits. Background technique [0004] Integrated circuits are susceptible to damage from electrostatic discharge from common environmental sources and can be destroyed when subjected to voltages higher than their intended voltage supply. Electrostatic discharge (ESD) protection circuits are used to harmlessly discharge current from an ESD event, and silicon-controlled rectifiers (SCRs) provide an effective solution in a small area. However, there are still problems in the design of SCRs for high voltage pins. ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/02H01L29/06H01L29/08H01L29/10H01L29/747
CPCH01L27/0262H01L29/0649H01L29/0834H01L29/1012H01L29/747H01L29/87H01L29/7436
Inventor A·C·阿帕索瓦米S·菲利普斯
Owner TEXAS INSTR INC