Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Storage chip, read-write method and read-write device of storage chip and single-chip microcomputer

A technology of storage chips and read-write devices, which is applied in the field of memory and can solve the problems of low efficiency of RAM read-write operations

Pending Publication Date: 2022-01-14
YANGTZE MEMORY TECH CO LTD
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The main purpose of this application is to provide a memory chip, a method for reading and writing a memory chip, a device for reading and writing, and a single-chip microcomputer, so as to solve the problem of low efficiency of reading and writing operations of RAM in the prior art

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Storage chip, read-write method and read-write device of storage chip and single-chip microcomputer
  • Storage chip, read-write method and read-write device of storage chip and single-chip microcomputer
  • Storage chip, read-write method and read-write device of storage chip and single-chip microcomputer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0024] It should be noted that, in the case of no conflict, the embodiments in the present application and the features in the embodiments can be combined with each other. The present application will be described in detail below with reference to the accompanying drawings and embodiments.

[0025] In order to enable those skilled in the art to better understand the solution of the present application, the technical solution in the embodiment of the application will be clearly and completely described below in conjunction with the accompanying drawings in the embodiment of the application. Obviously, the described embodiment is only It is an embodiment of a part of the application, but not all of the embodiments. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without creative efforts shall fall within the scope of protection of this application.

[0026] It should be noted that the terms "first" and "second...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a memory chip, a read-write method of the memory chip, a read-write device and a single-chip microcomputer. The memory chip comprises a main memory and an auxiliary memory. The auxiliary memory comprises buffers. The main memory comprises a memory array comprising a plurality of memory units; and a plurality of spaced bit lines, wherein memory unit columns are in communication connection with the buffers in a one-to-one correspondence mode through bit lines, and each memory unit column comprises all the memory units connected with one bit line. One end of a respective one bit line of the main memory RAM is in one-to-one corresponding communication connection with the buffer of the auxiliary memory, so that the main memory RAM and the auxiliary memory realize parallel communication. Compared with serial communication between the main memory RAM and the auxiliary memory in the prior art, the data transmission speed is greatly improved, the read-write operation efficiency of the main memory RAM is improved, and the problem of low read-write operation efficiency of the RAM in the prior art is solved.

Description

technical field [0001] The present application relates to the technical field of memory, in particular, to a memory chip, a method for reading and writing the memory chip, a reading and writing device, and a single-chip microcomputer. Background technique [0002] With the development of the information society, companies and individuals have an increasing demand for high-density memory. The rapid advancement of artificial intelligence has intensified the requirements for memory data interaction bandwidth. It is hoped that the bandwidth can keep up with the leap in computing power and achieve overall improvement in system performance. Therefore, high-density and high-bandwidth storage has become a popular direction for storage development today. [0003] The current computer or memory system generally includes flash, RAM and controller. The RAM is used as an intermediate cache to increase the system speed perceived by the user, so the read / write speed of the RAM plays a de...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G11C16/10G11C16/24G11C16/26
CPCG11C16/10G11C16/24G11C16/26
Inventor 杨盛玮
Owner YANGTZE MEMORY TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com