Preparation method of nanowire silver film for packaging and interconnection of large-size power semiconductor integrated circuit

A technology for power semiconductors and integrated circuits, which is applied in the field of preparation of nanowire silver films for packaging and interconnection of large-scale power semiconductor integrated circuits, can solve problems such as process adaptability and insufficient use performance, and achieves low porosity, stable performance, The effect of reducing thermomechanical stress

Pending Publication Date: 2022-01-21
NAT UNIV OF DEFENSE TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The invention provides a method for preparing a nanowire silver film for encapsulation and interconnection of large-scale power semiconductor integrated circuits, which is used to overcome defects such as insufficient process adaptability and use performance in the prior art

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  • Preparation method of nanowire silver film for packaging and interconnection of large-size power semiconductor integrated circuit
  • Preparation method of nanowire silver film for packaging and interconnection of large-size power semiconductor integrated circuit
  • Preparation method of nanowire silver film for packaging and interconnection of large-size power semiconductor integrated circuit

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preparation example Construction

[0020] The present invention proposes a method for preparing a nanowire silver film for encapsulating and interconnecting large-scale power semiconductor integrated circuits, comprising the following steps:

[0021] S1: diluting and purifying the silver nanowire mother liquor to obtain a silver nanowire dispersion;

[0022] S2: performing pressure filtration or suction filtration on the silver nanowire dispersion to obtain a wet nanowire silver film;

[0023] S3: drying the wet nanowire silver film to obtain a nanowire silver film.

[0024] Preferably, in step S1, the dilution is specifically:

[0025] The silver nanowire mother liquor is diluted 2 to 20 times with a diluent. The purpose of dilution is to dissolve the organic matter coated on the surface of the silver nanowires into diluents such as water and ethanol to achieve the purpose of purification.

[0026] Preferably, the diluent is ethanol, deionized water or other alcoholic low-boiling organic solvents. The surf...

Embodiment 1

[0039] This embodiment provides a method for preparing a nanowire silver film for encapsulation and interconnection of large-scale power semiconductor integrated circuits, including the following steps:

[0040] S1: The silver nanowire mother liquor is prepared by the conventional alcohol-thermal method, and the silver nanowire mother liquor in the silver nanowire mother liquor is as follows figure 1 As shown, the diameter is 100-150 nm, and the length is 25-35 μm.

[0041] Take 0.5L of silver nanowire mother liquor and place it in a beaker, take normal temperature deionized water in a ratio of 1:10 with the silver nanowire mother liquor, and add it to the beaker to dilute the silver nanowire mother liquor;

[0042] The beaker was placed in a water bath at 30° C. and stirred for 2 hours at a stirring speed of 500 r / min to obtain a silver nanowire dispersion.

[0043] S2: filter the silver nanowire dispersion liquid under a pressure of 0.5 MPa to form a wet nanowire silver fil...

Embodiment 2

[0047]This embodiment provides a method for preparing a nanowire silver film for encapsulation and interconnection of large-scale power semiconductor integrated circuits, including the following steps:

[0048] S1: A silver nanowire mother liquor is prepared by a conventional alcohol-thermal method, and the silver nanowire mother liquor has a diameter of 50-80 nm and a length of 20-33 μm.

[0049] Take 0.7L of silver nanowire mother liquor and place it in a beaker, take normal temperature deionized water in a ratio of 1:16 with the silver nanowire mother liquor, and add it into the beaker to dilute the silver nanowire mother liquor;

[0050] The beaker was placed in a water bath at 50° C. and stirred for 0.5 h at a stirring speed of 500 r / min to obtain a silver nanowire dispersion.

[0051] S2: filter the silver nanowire dispersion liquid under a pressure of 0.5 MPa to form a wet nanowire silver film. The filter press membrane in this embodiment is a hydrophilic polytetrafluo...

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Abstract

The invention discloses a preparation method of a nanowire silver film for packaging and interconnection of a large-size power semiconductor integrated circuit. The preparation method comprises the following steps: diluting and purifying a silver nanowire mother solution, and carrying out filter pressing or suction filtration and drying to obtain the nanowire silver film. The preparation method provided by the invention is simple in process, low in cost and controllable in film thickness. The nanowire silver film prepared through the method has the advantages of being easy to form, free of impurities such as organic matter and the like, high in structural strength, capable of achieving low-temperature sintering, convenient and efficient to use and high in reliability, and the film layer obtained after hot pressing sintering has the advantages of being high in heat conductivity, high in conductivity, low in porosity and the like.

Description

technical field [0001] The invention relates to the technical field of electronic packaging, in particular to a method for preparing a nanowire silver film for packaging and interconnecting large-scale power semiconductor integrated circuits. Background technique [0002] At present, the chip-substrate interconnection of high-power semiconductor integrated circuits is mostly realized by nano-silver film. Nano-silver films on the market are mostly prepared by nano-silver particles, and the film-forming property of particle raw materials is poor. Usually, organic substances such as film-forming agents and dispersants need to be added, and films are prepared by casting methods, coating methods and other processes. Although the content of nano-silver particles in the silver film is as high as 99%, the content of organic matter is still relatively high, about 1%. The silver film prepared by nano-silver particles has shortcomings in terms of process adaptability and performance i...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B22F9/24B82Y30/00B82Y40/00C23C26/00B22F1/054B22F1/062
CPCB22F9/24C23C26/00B82Y40/00B82Y30/00
Inventor 余翠娟叶益聪堵永国王震彭泳潜倪子琪徐元曦
Owner NAT UNIV OF DEFENSE TECH
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