Control device and control method for dynamically controlling utilization rate of sputtering target material

Abstract

The invention discloses a control device and a control method for dynamically controlling the utilization rate of a sputtering target material, relates to the field of magnetron sputtering coating, and aims to solve the problems that in the prior art, a control device for the utilization rate of a sputtering target material is complex in measurement mode, the working efficiency is affected, online real-time measurement cannot be achieved, time is wasted, and the utilization rate of the target material cannot be dynamically controlled. A fixed seat is mounted on the upper end face of a target material sputtering workbench, lifting protection plates are mounted above the two ends of the fixed seat, movable protection plates are mounted on the front end face and the rear end face of the fixed seat, a sealing cover body is mounted above the target material sputtering workbench, and an electric box is mounted above the sealing cover body. A magnetic field generator is installed at the lower end of the electrical box, and electrode plates are installed on the two sides of the magnetic field generator. A target material base is installed above an inner fixing box, and sputtering target material bodies are installed on the two sides of the target material base.

Description

technical field [0001] The invention relates to the technical field of magnetron sputtering coating, in particular to a control device and a control method for dynamically controlling the utilization rate of a sputtering target. Background technique [0002] Magnetron sputtering coating is a new type of physical vapor coating method, which uses the electrode plate system to emit and focus electrons on the material to be plated, so that the sputtered atoms follow the principle of momentum conversion and detach with higher kinetic energy. The material flies to the substrate to deposit a film. The material to be plated is called a sputtering target. Sputtering is one of the main technologies for preparing thin film materials. It uses ions generated by ion sources to gather them in a vacuum to form a high-speed energy ion beam. When the solid surface is bombarded, kinetic energy exchange occurs between ions and solid surface atoms, so that the atoms on the solid surface leave t...

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Problems solved by technology

[0004] The purpose of the present invention is to provide a control device and a control method for dynamically controlling the utilization rate of sputtering targets, so as to solve the problem that the existing control devices for the utilization rate of sputtering targets proposed in the above-mentioned background art have complex measurement methods and affect work efficiency. Online real-time measurement cannot be realized, which wastes time and cannot dynamically control the utilization of targets

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