Semiconductor structure and manufacturing method thereof
A manufacturing method and semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., can solve problems such as SAC head damage, achieve improved damage, strong practicability, and novel design Effect
Pending Publication Date: 2022-02-18
广东汉岂工业技术研发有限公司
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Problems solved by technology
When the contact part is in contact with the SAC head, it will cause certain damage to the SAC head
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[0034] In order to make the technical purpose, technical solution and technical effect of the present invention clearer, so that those skilled in the art can understand and implement the present invention, the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.
[0035] The invention proposes a method for manufacturing a semiconductor structure, comprising the following steps:
[0036] Step S1, providing infrastructure 100, such as Figure 4 As shown; the basic structure 100 includes a substrate 110 and a gate 120 inserted on the substrate 110; the basic structure 100 also includes a spacer 130 covering the sidewall of the gate 120, covering the spacer 130 on the substrate The first contact etch stop layer 140 on the portion above 110, the second contact etch stop layer 150 covering the portion of the substrate 110 between the gates 120, and the first contact etch stop layer covering the second con...
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The invention provides a semiconductor structure and a manufacturing method thereof. The semiconductor structure comprises a substrate and a grid electrode inserted on the substrate; a spacer layer covers the side wall of the gate, and a first contact etching stop layer covers the part, located above the substrate, of the spacer layer; the top surface of the grid electrode is etched to form a first groove, and the first groove is filled with an SAC head; a second contact etching stop layer covers the part, between the grid electrodes, of the substrate; the second contact etching stop layer is covered with a first interlayer dielectric layer; an SAC auxiliary spacer is formed on the top surface of the first interlayer dielectric layer and on the side wall of the first contact etching stop layer; the semiconductor structure further includes a contact menber; and the contact member is in contact with the substrate, completely covers the top surface of the SAC secondary spacer, and covers part or all of the top surface of the SAC head. The semiconductor structure and the manufacturing method thereof are novel in design and high in practicability.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to a semiconductor structure and a manufacturing method thereof. Background technique [0002] In order to achieve the purpose of reducing the size of the chip, the traditional semiconductor process will adopt the SAC (Self-Aligned Contact, self-aligned contact) process. like Figure 1-Figure 2 as shown, figure 1 A schematic diagram showing the state of the pre-contact step of the SAC manufacturing process of a conventional semiconductor structure; figure 2 show figure 1 Schematic diagram of the state of the contacting step of the shown SAC process. When the contact part is in contact with the SAC head, it will cause certain damage to the SAC head. The contact dimension x of the contact part and the SAC head in the horizontal direction is inversely proportional to the damage degree y of the SAC head in the vertical direction, such as image 3 shown. Therefore, it is ...
Claims
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IPC IPC(8): H01L21/768H01L23/528
CPCH01L21/76897H01L23/5283
Inventor 张峰溢林盈志蔡尚元苏廷锜
Owner 广东汉岂工业技术研发有限公司