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Thin film deposition equipment

A thin-film deposition and equipment technology, applied in the field of thin-film deposition equipment, can solve the problems of gas escape, lack of gas space constraints, and reduce the utilization rate of raw materials, so as to achieve uniform and stable air pressure, reduce heat dissipation, and improve the utilization rate of electric energy.

Active Publication Date: 2022-02-25
北京中科重仪半导体科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Although the existing thin film deposition equipment has a homogeneous design in the inlet, it lacks effective space constraints on the gas. Therefore, when the gas enters the reaction chamber, it will generate vortex and pre-reaction to varying degrees, resulting in gas escape and reducing raw material utilization

Method used

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Embodiment Construction

[0025] Hereinafter, the present invention will be described in more detail with reference to the accompanying drawings. In the various figures, identical elements are indicated with similar reference numerals. For the sake of clarity, various parts in the drawings have not been drawn to scale. Also, some well-known parts may not be shown.

[0026] It should be understood that when describing the structure of a component, when a layer or a region is referred to as being "on" or "over" another layer or another region, it may mean being directly on another layer or another region, or Other layers or regions are also included between it and another layer or another region. And, if the part is turned over, the layer, one region, will be "below" or "beneath" the other layer, another region.

[0027] If it is to describe the situation directly on another layer or another area, the expression "directly on" or "on and adjacent to" will be used herein.

[0028] In the following, man...

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Abstract

The invention discloses thin film deposition equipment which comprises a base, a side wall located on the base and an upper cover located on the side wall and arranged opposite to the base, and a reaction cavity of the thin film deposition equipment is defined by the base, the side wall and the upper cover. The thin film deposition equipment further comprises a bearing disc located in the reaction cavity and a spray head used for providing gas, the spray head is located above the bearing disc, the upper cover is provided with a plurality of flow channels corresponding to the spray head, each flow channel is arranged in the radial direction and has a certain rotating direction, and the rotating direction of the flow channels is consistent with the rotating direction of the bearing disc. According to the design, gas in the reaction chamber in the equipment is restrained by the flow channel, so that the stability of gas flow is improved, gas dissipation is reduced, the utilization rate of raw materials is improved, the quality of a generated film is improved, and the cost is reduced.

Description

technical field [0001] The present invention relates to the technical field of semiconductor manufacturing, and more particularly, to a thin film deposition equipment. Background technique [0002] Chemical vapor deposition (Chemical Vapor Deposition, CVD) refers to the method of chemical gas or steam reacting on the surface of the substrate to synthesize thin films, among which metal-organic chemical vapor deposition (Metal-organic Chemical Vapor Deposition, MOCVD) is more common. Metal organic compound chemical vapor deposition technology has the advantages of wide application range, easy growth control, good epitaxial layer uniformity, and large-scale production, so it is widely used. Usually, the gas that participates in the film growth reaction is guided into the reaction chamber of the film deposition equipment through the pipeline, and the gas is homogenized or distributed to the nozzle through the shower head, and then sprayed out according to the pre-designed path. ...

Claims

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Application Information

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IPC IPC(8): C23C16/455C23C16/44C23C16/458
CPCC23C16/45504C23C16/4558C23C16/45574C23C16/4412C23C16/4584C23C16/4586
Inventor 张瑭张天明
Owner 北京中科重仪半导体科技有限公司