Thin Film Deposition Equipment
A thin-film deposition and equipment technology, applied in metal material coating process, coating, gaseous chemical plating, etc., can solve the problems of gas escape, lack of gas space constraints, and reduce the utilization rate of raw materials, and achieve uniform and stable air pressure, The effect of reducing heat dissipation and improving power utilization
Active Publication Date: 2022-04-15
北京中科重仪半导体科技有限公司
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Problems solved by technology
[0003] Although the existing thin film deposition equipment has a homogeneous design in the inlet, it lacks effective space constraints on the gas. Therefore, when the gas enters the reaction chamber, it will generate vortex and pre-reaction to varying degrees, resulting in gas escape and reducing raw material utilization
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[0025] Hereinafter, the present invention will be described in more detail with reference to the accompanying drawings. In the various figures, identical elements are indicated with similar reference numerals. For the sake of clarity, various parts in the drawings have not been drawn to scale. Also, some well-known parts may not be shown.
[0026] It should be understood that when describing the structure of a component, when a layer or a region is referred to as being "on" or "over" another layer or another region, it may mean being directly on another layer or another region, or Other layers or regions are also included between it and another layer or another region. And, if the part is turned over, the layer, one region, will be "below" or "beneath" the other layer, another region.
[0027] If it is to describe the situation directly on another layer or another area, the expression "directly on" or "on and adjacent to" will be used herein.
[0028] In the following, man...
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The present application discloses a thin film deposition equipment. The thin film deposition equipment includes: a base, a side wall on the base, and an upper cover on the side wall opposite to the base. The base, the side wall and the upper cover form a thin film deposition equipment reaction chamber, wherein the thin film deposition equipment also includes a carrier plate located in the reaction chamber and a shower head for supplying gas, the shower head is located above the carrier plate, and a plurality of flow channels corresponding to the shower head are arranged on the upper cover, each The four flow channels are arranged radially and have a certain rotation direction, and the rotation direction of the plurality of flow channels is consistent with the rotation direction of the bearing plate. This design makes the gas in the reaction chamber in the equipment restricted by the flow channel, which improves the stability of the gas flow, reduces the gas escape, improves the utilization rate of raw materials, and then improves the quality of the formed film and reduces the cost.
Description
technical field [0001] The present invention relates to the technical field of semiconductor manufacturing, and more particularly, to a thin film deposition equipment. Background technique [0002] Chemical vapor deposition (Chemical Vapor Deposition, CVD) refers to the method of chemical gas or steam reacting on the surface of the substrate to synthesize thin films, among which metal-organic chemical vapor deposition (Metal-organic Chemical Vapor Deposition, MOCVD) is more common. Metal organic compound chemical vapor deposition technology has the advantages of wide application range, easy growth control, good epitaxial layer uniformity, and large-scale production, so it is widely used. Usually, the gas that participates in the film growth reaction is guided into the reaction chamber of the film deposition equipment through the pipeline, and the gas is homogenized or distributed to the nozzle through the shower head, and then sprayed out according to the pre-designed path. ...
Claims
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IPC IPC(8): C23C16/455C23C16/44C23C16/458
CPCC23C16/45504C23C16/4558C23C16/45574C23C16/4412C23C16/4584C23C16/4586
Inventor 张瑭张天明
Owner 北京中科重仪半导体科技有限公司