Lossless cleavage method of semiconductor chip
A semiconductor and cleavage technology, applied in the field of non-destructive cleavage of semiconductor chips, can solve the problems of semiconductor structure quality degradation, single semiconductor structure breakage, etc., reduce the probability of chip cracking, simplify the chip cleavage process, and have broad application prospects Effect
Active Publication Date: 2022-03-11
江西省纳米技术研究院
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[0003]
When the above method is used to cut the entire semiconductor chip, because the width of the blade of the scribe is relatively large, the width of the cleavage line is also relatively large. When the semiconductor chip is cleaved, the single semiconductor structure will be broken when it is separated due to the lack of stress concentration. leading to degradation of the quality of the semiconductor structure
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[0030] In order to make the objects, technical solutions and advantages of the present invention, the present invention will be described in detail below with reference to the accompanying drawings and examples. It should be understood that the specific embodiments described herein are merely intended to illustrate the invention and are not intended to limit the invention.
[0031] Such as Figure 1 - Figure 3 As shown, a non-destructive method of non-destructive semiconductor chip, the specific steps are as follows:
[0032] S1, a semiconductor chip is provided, and the first decorative line 1 is defined at the front side of the semiconductor chip, and is made, and the second decay line 2 is defined in the back surface of the semiconductor chip;
[0033] Specifically, such as figure 1 As shown, the second decorative line 2 is located directly below the first decree line 1 and is parallel to each other, wherein the second decree line 2 is not shown in the figure, and the decision l...
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Abstract
The invention discloses a lossless cleavage method of a semiconductor chip, which comprises the following steps: providing a semiconductor chip, and defining a first cleavage line and a second cleavage line; processing a first cleavage groove and a second cleavage groove according to the first cleavage line and the second cleavage line; coating pure photoresist resin to form a first upper reinforcing layer and a first lower reinforcing layer; cutting again to form a third cleavage groove and a fourth cleavage groove; coating photoresist resin doped with reinforcing fibers in the third cleavage groove and the fourth cleavage groove to form a second upper reinforcing layer and a second lower reinforcing layer; and cleavage is completed. According to the method disclosed by the invention, the pure photoresist resin and the photoresist resin doped with the reinforcing fibers are adopted for filling step by step to form two reinforcing layers, so that the stress borne by the semiconductor chip in the cutting process can be effectively balanced, the probability of chip breakage is remarkably reduced, the chip cleavage process can be simplified, good economic benefits can be generated, and the production cost is reduced. The application prospect is wide.
Description
Technical field [0001] The present invention relates to the field of semiconductor technology, and more particularly to a non-destructive solution method of a semiconductor chip. Background technique [0002] During the machining of the semiconductor, a plurality of semiconductor chips are needed to decompose a plurality of individual semiconductor structures, and the prior art uses a knife to draw a wire on the entire semiconductor chip, and then separate the semiconductor chip along the decision line. This method is similar to a method of cutting a glass sheet. [0003] When the above method is cut, the cutting of the semiconductor chip is cut, because the cutting edge width is large, the width of the detonation line is also relatively large, and the semiconductor chip is divided, because the stress is not concentrated, a single semiconductor structure is broken when separated, The quality of the semiconductor structure is lowered. In view of this, the inventors have proposed a...
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Login to View More IPC IPC(8): B28D5/00H01L21/78
CPCB28D5/0011H01L21/78Y02P70/50
Inventor 黄寓洋范亚明
Owner 江西省纳米技术研究院