Semiconductor packaging structure

A packaging structure and semiconductor technology, which is applied in the direction of semiconductor devices, semiconductor/solid device manufacturing, semiconductor/solid device components, etc., can solve the problems of resin material 20 error, thickness, error, etc.

Pending Publication Date: 2022-03-11
ADVANCED SEMICON ENG INC
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the main reason for the excessive thickness of the resin material 20 above the die 10 is the deviation from the manufacturing process and the deviation of the resin material 20 itself.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor packaging structure
  • Semiconductor packaging structure
  • Semiconductor packaging structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0022] The following disclosure provides many different embodiments or examples for implementing different features of the presented subject matter. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course these are merely examples and are not intended to limit the invention. For example, in the following description, forming a first component over or on a second component may include embodiments in which the first component and the second component are in direct contact, or may include forming an additional component between the first component and the second component An embodiment such that the first part and the second part may not be in direct contact. Also, the present invention may repeat reference numerals and / or letters in various instances. This repetition is for brevity and clarity only and does not in itself indicate a relationship between the various embodiments and / or configurations discussed.

[0023] ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to a semiconductor packaging structure. The semiconductor packaging structure comprises a substrate and a first electronic component embedded in the substrate, the substrate is provided with a first conductive through hole, the first conductive through hole is electrically connected with the first electronic component, and the first conductive through hole is physically separated from the first electronic component. According to the technical scheme of the invention, at least the electrical connection between the through hole and the electronic element can be ensured.

Description

technical field [0001] The present invention relates to the technical field of semiconductors, and more specifically, to a semiconductor packaging structure. Background technique [0002] With the evolution of semiconductor packaging technology, various packaging structures are introduced, and the overall package size is getting smaller and more functions. Therefore, a power package (PowerPackage) capable of controlling various components is usually required. To a certain extent, Semiconductor Embedded in Substrate (SESUB) is a trend that the packaging industry will inevitably move towards component integration in the future. [0003] In the current SESUB process, during the sandblasting process for forming micro vias, it is found that there will be a problem of electrical disconnection caused by the open. Such as figure 1 As shown, this is mainly because the thickness of the resin material 20 above the die 10 is too thick, so that the preset sandblasting process is not e...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/485H01L23/488H01L23/498H01L21/60H01L21/48
CPCH01L23/4824H01L23/485H01L24/16H01L23/49822H01L23/49827H01L21/4857H01L21/486H01L24/11H01L2224/02333H01L2224/02331H01L2224/0231H01L2224/02381H01L2224/16058H01L2224/16113
Inventor 石立节黄文宏
Owner ADVANCED SEMICON ENG INC
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap