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Light emitting diode with improved color purity

A technology of light-emitting diodes and light-emitting surfaces, which can be used in semiconductor devices, electrical components, circuits, etc., and can solve problems such as reduced conversion efficiency.

Pending Publication Date: 2022-03-18
PLESSEY CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since all visible light incident on the inner wall of each sub-pixel is absorbed, the conversion efficiency is significantly reduced

Method used

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  • Light emitting diode with improved color purity
  • Light emitting diode with improved color purity
  • Light emitting diode with improved color purity

Examples

Experimental program
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Effect test

Embodiment Construction

[0081] According to an embodiment of the present disclosure, an LED array 10 is provided. The LED array includes three LEDs, each configured to output light of a different wavelength. At least one LED includes a color converting material. As such, the LED array 10 also includes LEDs according to embodiments of the present disclosure.

[0082] figure 2 is a schematic diagram of an LED array 10 according to an embodiment of the disclosure. figure 2 The LED array shown in includes green LED 100, red LED 200 and blue LED 300.

[0083] The LED array 10 includes a light generating layer 20 . Light generating layer 20 includes an array of semiconductor junctions, where each semiconductor junction is configured to output pump light. As such, the light generating layer 20 can be considered as an array of pump light LEDs 21 , 22 , 23 . exist figure 2 In an embodiment of , the arrays of pump light LEDs 21 , 22 , 23 each comprise Ill-nitride. Each pump light LED 21, 22, 23 incl...

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Abstract

A light emitting diode is provided having an LED layer configured to emit pump light having a pump light wavelength from a light emitting surface, the LED layer comprising a plurality of Group III nitride layers. A container layer is disposed on a light emitting surface of the LED layer, the container surface including an opening that defines a container volume from the container layer to the light emitting surface of the LED layer. A color conversion layer is disposed in the container volume, the color conversion layer configured to absorb pump light and emit converted light having a converted light wavelength greater than the pump light wavelength. A lens is disposed on a surface of the container above the opening, the lens having a convex surface on a side of the lens opposite the color conversion layer. A pump light reflector laminate is disposed over the convex surface of the lens, the pump light reflector laminate having a stop band configured to reflect pump light centered on a first wavelength.

Description

technical field [0001] The present disclosure relates to Light Emitting Diodes (LEDs) and LED arrays. In particular, the present disclosure relates to LEDs comprising III-nitrides. Background technique [0002] Micro LED arrays are typically limited to dimensions of 100 x 100 μm 2 or smaller LED arrays. Micro LED arrays are self-emissive microdisplays / projectors that are suitable for use in a variety of devices such as smart watches, head-mounted displays, heads-up displays, cameras, viewfinders, multi-point excitation sources, and microprojectors. [0003] One known form of micro LED array includes a plurality of LEDs formed from Group III nitrides. Group III nitride LEDs are inorganic semiconductor LEDs that contain GaN and its alloys with InN and AlN in the active light emitting region. III-nitride LEDs can be driven at significantly higher current densities and emit higher optical power densities than conventional large-area LEDs, such as Organic Light Emitting Diode...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/50H01L33/58H01L33/60H01L33/46H01L33/32H01L25/075
CPCH01L33/507H01L33/60H01L33/58H01L33/46H01L33/32H01L25/0753H01L33/50H01L25/075H01L33/30H01L25/13H01L33/06H01L33/10H01L33/52
Inventor 金峻渊S·梅佐阿里J·香农K·斯特里布利M·阿齐兹
Owner PLESSEY CO LTD