Silicon wafer BMD auxiliary positioning device and silicon wafer BMD measuring method
A technology for auxiliary positioning and measurement methods, which is applied in the direction of measuring devices, radio wave measurement systems, satellite radio beacon positioning systems, etc., can solve problems such as area ambiguity, observation of silicon wafer depth changes, and inaccurate numbers when counting BMD, and achieve The effect of accurate BMD counting
Pending Publication Date: 2022-04-05
宁夏中欣晶圆半导体科技有限公司
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Therefore, it is necessary to split the complete silicon wafer after heat treatment along the center line so that the section can be observed through a microscope and the BMD can be counted. In the prior art, since the silicon wafer needs to be stood up and placed on the stage for observation, Usually, the silicon wafer is fixed on the stage by clips for observation, but when observing the BMD number of the silicon wafer at a depth of 0 μm-100 μm with a microscope, if the cleavage surface of the silicon wafer is not placed horizontally, some areas will be clear when observing the BMD number with the microscope. Some areas are blurred, and the lens needs to be readjusted to gradually clear the blurred area. However, when adjusting the camera, it is easy to cause changes in the depth of the observed silicon wafer, resulting in inaccurate numbers when counting BMD
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[0063] Example: Cut monocrystalline silicon into silicon wafers with a thickness of 1 mm, rapidly raise the temperature of the silicon wafers to 1100 °C at 80 °C / s, feed 50 bar nitrogen gas, and react for 20 minutes. After 20 min of reaction, feed 60 bar argon gas , keep it for 10 minutes, then cool down to 800°C at a rate of 20°C / min, react for 4 hours, and then raise the temperature to 1000°C at a rate of 7°C / min to obtain a treated silicon wafer, and then mechanically polish the treated silicon wafer , remove the thickness of 30 μm on the front and back sides of the silicon wafer to be processed, then split the silicon wafer in half, and detect it under a microscope. The distribution of BMD at different depths inside the silicon wafer in specific embodiments is as follows Figure 4 , 5 shown.
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Abstract
The invention relates to a silicon wafer BMD auxiliary positioning device and a silicon wafer BMD measuring method, the silicon wafer BMD auxiliary positioning device comprises a fixing clamp and a positioning plate, the fixing clamp comprises a clamping assembly and a frame body, one end of the clamping assembly is slidably connected with one side of the frame body, the other end of the clamping assembly is in contact with the other side of the frame body, the frame body can slide along the positioning plate, and the positioning plate is connected with the clamping assembly. According to the silicon wafer BMD auxiliary positioning device, the cleavage surface of the silicon wafer is aligned with the positioning plate, then the silicon wafer is clamped through the clamping assembly, the frame body is turned over by 180 degrees, and then the positioning plate is moved away, so that the cleavage surface of the silicon wafer is aligned with the microscope, and when the microscope is used for counting, because the silicon wafer is always kept horizontal, the number of the BMD is observed through the microscope, the number of the BMD is accurately measured. The microscope only needs to be adjusted once, the area observed by the microscope can be clear, and BMD counting is more accurate for the same depth.
Description
technical field [0001] The invention relates to the technical field of a BMD detection device and method in a single crystal silicon body, in particular to a silicon wafer BMD auxiliary positioning device and a silicon wafer BMD measurement method. Background technique [0002] One of the main uses of monocrystalline silicon materials is in the field of semiconductors. For some applications, semiconductor monocrystalline silicon has strict purity requirements. Impurity elements, especially metal impurity elements, have negative effects that cannot be ignored on semiconductor monocrystalline silicon wafers. Therefore, in addition to strictly controlling impurity elements during production and processing, the built-in getter principle (Inner Getter, IG) is also used to further remove the influence of impurity elements. Bulk microdefects (BMDs) are the main body of built-in gettering, and their density has a slight correlation with the IG capability of silicon wafers. For some...
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Login to View More IPC IPC(8): G01S19/06H01L21/66H01L21/68
Inventor 倪浩然谢国荣冉泽平祁海滨王忠保
Owner 宁夏中欣晶圆半导体科技有限公司