Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Data reading method, storage device and storage medium

A technology for data reading and storage equipment, applied in the direction of input/output to the record carrier, etc., can solve the problem of long data reading time, and achieve the effect of improving data reading efficiency and shortening data reading time.

Pending Publication Date: 2022-04-15
广州致存科技有限责任公司
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The main purpose of the present invention is to provide a data reading method, a storage device and a computer-readable storage medium, aiming to solve the technical problem of long time-consuming data reading in related technologies

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Data reading method, storage device and storage medium
  • Data reading method, storage device and storage medium
  • Data reading method, storage device and storage medium

Examples

Experimental program
Comparison scheme
Effect test

no. 1 example

[0063] refer to figure 2 , the present invention provides a first embodiment of a data reading method, the method comprising:

[0064] Step S10, when the data reading fails, obtain the reading times corresponding to the target storage unit;

[0065] Step S20, determining the adjustment step associated with the number of readings;

[0066] Step S30 , adjusting the reading voltage according to the adjustment step, and reading the data stored in the target storage unit according to the adjusted reading voltage.

[0067] In this embodiment, when the data reading device is reading data and detects that the reading fails, the reading times corresponding to the target storage unit may be obtained.

[0068] It can be understood that data is stored in the form of electrical charge in the Flash memory unit. The amount of stored charge depends on the voltage applied to the control gate (Control gate), which can control whether the charge is charged into the storage unit or released. ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a data reading method, a storage device and a computer readable storage medium, and the method comprises the steps: obtaining a reading frequency corresponding to a target storage unit when data reading fails; determining an adjustment step length associated with the reading times; and adjusting a reading voltage according to the adjustment step length, and reading data stored in the target storage unit according to the adjusted reading voltage. The invention aims to achieve the effect of shortening data reading time.

Description

technical field [0001] The invention relates to the technical field of material processing, in particular to a data reading method, a storage device and a computer-readable storage medium. Background technique [0002] In today's highly developed electronic information technology, computer flash memory device NAND is used in many scenarios. For example, eMMC (Embedded Multi Media Card) is essentially a product obtained by integrating and packaging NAND and a main control IC. [0003] According to the number of bits stored in each storage unit (cell), NAND storage units can be divided into SLC (Single-Level Cell, unipolar storage unit), MLC (Multi-Level Cell, multi-level storage unit) and There are three types of TLC (Triple-Level Cell, three-level storage unit). However, the more bits stored in a single storage unit of NAND, the worse the read and write performance will be. And with the passage of time and unavoidable read-write interference, the threshold voltage of the ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G06F3/06
Inventor 曹志忠吴大畏李晓强
Owner 广州致存科技有限责任公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products