Semiconductor structure

Abstract

The invention provides a semiconductor structure. At least two isolation side walls of which the bottoms are sequentially lowered are arranged on the side edge of a gate structure, and the bottom of a contact plug is further lowered to extend into a substrate, so that a metal silicide layer is sunken in a deeper position of the substrate, and the distance between the metal silicide layer and the gate structure is increased. Therefore, the problem that metal is diffused to the gate structure in the preparation process of the metal silicide layer and after the preparation of the metal silicide layer is completed can be effectively improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a semiconductor structure. Background technique [0002] Transistor devices, as the main devices in semiconductor integrated circuits, are widely used in memory and logic circuits. specific reference figure 1 As shown, the transistor generally includes a gate structure 20 formed on the surface of the substrate 10 and a source-drain region 30 formed in the substrate 10 and located on the side of the gate structure 20, wherein the source-drain region 30 usually also needs The electrical extraction is realized through the contact plug 50 , that is, the bottom of the contact plug 50 extends to the substrate 10 to be electrically connected to the source and drain regions 30 . [0003] In the prior art, in order to reduce the contact resistance between the contact plug 50 and the source-drain region 30, a metal silicide layer 40 is generally formed on the contact surface of th...

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a semiconductor structure to solve the problem that the metal in the metal silicide layer is easy to diffuse to the gate structure

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