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TFT structure, array substrate and display device

An array substrate and drain technology, applied in the semiconductor field, can solve the problems of increasing channel injection damage, increasing process complexity, etc., and achieve the effects of reducing warpage effect and reducing impact ionization

Pending Publication Date: 2022-04-15
KUNSHAN GO VISIONOX OPTO ELECTRONICS CO LTD
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  • Abstract
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Problems solved by technology

However, the LDD structure requires an additional ion implantation process, which increases the complexity of the process and also increases the implantation damage to the channel.

Method used

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  • TFT structure, array substrate and display device
  • TFT structure, array substrate and display device
  • TFT structure, array substrate and display device

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Embodiment Construction

[0028] In order to make the object, technical solution and advantages of the present invention clearer, various embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings. However, those of ordinary skill in the art can understand that, in each implementation manner of the present invention, many technical details are provided for readers to better understand the present application. However, even without these technical details and various changes and modifications based on the following implementation modes, the technical solution claimed in this application can also be realized.

[0029] The first embodiment of the present invention relates to a TFT structure, the specific structure is as follows figure 2 As shown, it includes: a drain 10 , a source 20 , a channel 30 connecting the drain 10 and the source 20 , and a gate 40 disposed on one side of the channel 30 . The channel 30 includes a drain channel region 31 n...

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Abstract

The invention relates to the field of semiconductors, and discloses a TFT structure, an array substrate and a display device.The TFT structure comprises a drain electrode, a source electrode, a grid electrode and a channel, and the channel comprises a drain electrode channel region close to one side of the drain electrode and a source electrode channel region close to one side of the source electrode; the channel width of at least part of the drain channel region is different from the channel width of the source channel region. The TFT structure, the array substrate and the display device provided by the embodiment of the invention have the advantage that the warping effect of the TFT can be effectively reduced.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a TFT structure, an array substrate and a display device. Background technique [0002] With the development of flat panel displays, the demand for panels with high resolution and low energy consumption is constantly being raised. Low-temperature polysilicon (LowTemperature Poly-Silicon, LTPS) has been valued by the industry in liquid crystal display (Liquid Crystal Display, LCD) and organic light emitting diode display (Organic Light Emitting Diode, OLED) technology due to its high electron mobility. It is regarded as an important material to realize low-cost full-color flat panel display. For flat panel displays, low-temperature polysilicon materials have the advantages of high resolution, fast response, high brightness, high aperture ratio, and low energy consumption, and low-temperature polysilicon can be produced at low temperatures and can be used to make C-MOS (Complementary...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/10H01L29/786H01L27/12G09F9/33G09F9/35
Inventor 张九占张露胡思明
Owner KUNSHAN GO VISIONOX OPTO ELECTRONICS CO LTD
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