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Improvement method and improvement structure of driving circuit of multi-phase charge pump

A driving circuit and charge pump technology, applied in the field of microelectronics, can solve the problems of low system efficiency and high chip heating, and achieve the effects of improving system efficiency, saving power loss, and preventing Vout from being backflowed.

Pending Publication Date: 2022-04-15
SHENZHEN CHIPSVISION MICRO CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] The driving circuit of the multi-phase charge pump with standard architecture, its standard circuit architecture is as follows figure 1 As shown, it is necessary to use Q_Block MOS transistor to monitor the system overcurrent protection caused by the short circuit of the Fly capacitor of the charge pump, and to prevent the current from flowing backward at the output terminal Vout. Due to the large system current, the internal resistance of Q_Block MOS will lose energy, resulting in low system efficiency. , High chip heating and other issues

Method used

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  • Improvement method and improvement structure of driving circuit of multi-phase charge pump
  • Improvement method and improvement structure of driving circuit of multi-phase charge pump
  • Improvement method and improvement structure of driving circuit of multi-phase charge pump

Examples

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Effect test

Embodiment 1

[0031] For a multi-phase charge pump, the charge pump chip is equipped with four multi-phase cascaded NMOS transistors, namely NMOS transistors Q1, Q2, Q3, and Q4; the drain of the NMOS transistor Q1 is connected to the power input terminal VBUS, and the S of the NMOS transistor Q1 The pole is connected to the D pole of the NMOS transistor Q2, the S pole of the NMOS transistor Q2 is connected to the D pole of the NMOS transistor Q3, the S pole of the NMOS transistor Q3 is connected to the D pole of the NMOS transistor Q4; the S pole of the NMOS transistor Q2 is connected to the D pole of the NMOS transistor Q3 The output terminal Vout is also connected.

[0032] Such as Figure 4 As shown, in this embodiment, the NMOS transistor Q2 used as the primary MOS in the multi-phase cascaded MOS according to image 3 The structure, disconnect the short-circuited part of the B pole and the S pole, connect the B pole to the input terminal VBUS through a Schottky diode, and connect the B...

Embodiment 2

[0036] Embodiment 2 adopts another low-level control scheme on the basis of Embodiment 1, as follows:

[0037] For a multi-phase charge pump, the charge pump chip is equipped with four multi-phase cascaded NMOS transistors, namely NMOS transistors Q1, Q2, Q3, and Q4; the drain of the NMOS transistor Q1 is connected to the power input terminal VBUS, and the S of the NMOS transistor Q1 The pole is connected to the D pole of the NMOS transistor Q2, the S pole of the NMOS transistor Q2 is connected to the D pole of the NMOS transistor Q3, the S pole of the NMOS transistor Q3 is connected to the D pole of the NMOS transistor Q4; the S pole of the NMOS transistor Q2 is connected to the D pole of the NMOS transistor Q3 The output terminal Vout is also connected.

[0038] Such as Figure 5 As shown, in this embodiment, the NMOS transistor Q2 used as the primary MOS in the multi-phase cascaded MOS according to image 3 The structure, disconnect the short-circuited part of the B pole ...

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Abstract

The invention provides a method for improving a driving circuit of a multi-phase charge pump. The method comprises the following steps of: disconnecting a short circuit of a B pole and an S pole of an NMOS (N-channel Metal Oxide Semiconductor) tube; and low-level control is carried out on the B pole, so that the B pole is communicated with one low-level end of the input end VBUS and one low-level end of the output end Vout. According to the invention, the power consumption of the QBlock MOS tube can be saved and the heating of the system can be reduced while the functions of protecting the Fly capacitor from short circuit and overcurrent and preventing the Vout from flowing backwards are realized.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and in particular relates to a method for improving a drive circuit of a multi-phase charge pump and an improved structure of the drive circuit. Background technique [0002] The driving circuit of the multi-phase charge pump with standard architecture, its standard circuit architecture is as follows figure 1 As shown, it is necessary to use Q_Block MOS transistor to monitor the system overcurrent protection caused by the short circuit of the Fly capacitor of the charge pump, and to prevent the current from flowing backward at the output terminal Vout. Due to the large system current, the internal resistance of Q_Block MOS will lose energy, resulting in low system efficiency. , High chip heating and other issues. Contents of the invention [0003] The purpose of the present invention is to propose a method for improving the drive circuit of a multi-phase charge pump and an improved st...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H02M3/07H02M1/088
CPCH02M3/07H02M1/088
Inventor 邵礼斌
Owner SHENZHEN CHIPSVISION MICRO CO LTD
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