Airtight high-temperature-resistant packaging structure with inverted double-sided heat dissipation chip

Abstract

The invention discloses an air-tight high-temperature-resistant packaging structure with inverted double-sided heat dissipation chips. The air-tight high-temperature-resistant packaging structure comprises an upper ceramic substrate, a lower ceramic substrate and a metal sealing tape, a first metallization region, a second metallization region, a third metallization region, a fourth metallization region, a fifth metallization region, a sixth metallization region, a seventh metallization region, an eighth metallization region, a SiC MOSFET of an upper bridge arm, a SiC MOSFET of a lower bridge arm, a first gasket, a second gasket, a third gasket and a fourth gasket are arranged in the upper ceramic substrate; and the back surface of the upper ceramic substrate is provided with a first back metallization region, a second back metallization region, a third back metallization region, a fourth back metallization region, a fifth back metallization region, a sixth back metallization region and a seventh back metallization region. The structure has the characteristics of low cost, high reliability, low parasitic parameter and high temperature resistance.

Description

technical field [0001] The invention relates to a packaging structure, in particular to an airtight and high-temperature-resistant packaging structure in which double-sided cooling chips are flip-chip. Background technique [0002] Silicon carbide devices are currently the most promising devices in civil and military power semiconductors, because silicon carbide devices have the advantages of high temperature resistance, high frequency, and high voltage. Therefore, silicon carbide devices have gradually replaced silicon devices, and their applications are becoming more and more extensive. [0003] The theoretical operating temperature of silicon carbide devices can reach above 500°C, but due to the limitations of packaging materials, insulating materials, high-temperature solder, etc., the maximum temperature of devices in practical applications is often only 150°C, which makes the performance advantages of silicon carbide devices themselves unable to be fully realized. pla...

AI Technical Summary

Problems solved by technology

However, these two packaging forms have certain limitations: 1) the cost of mold making is high; 2) the design and production cycle is long, the metal package needs more than 3 months, and the ceramic package needs more than half a year; 3) the long production cycle brings The problem that pre-production cannot be pre-produced may lead to the scrapping of a large number of products; 4) generally only for a single semiconductor chip, the integration level is poor; 5) there are large parasitic parameters on the pin

This greatly limits the development of silicon carbide device packaging technology at high temperature

Images