Bidirectional amplifier based on parasitic parameter fusion matching technology
A technology of bidirectional amplifiers and parasitic parameters, applied in bidirectional amplifiers, transmission systems, electrical components, etc., can solve the problems of large area of single-pole double-throw switches, reduce system noise figure, limit circuit integration, etc., and achieve the elimination of single-pole double-throw Switch, good application prospect, effect of reducing area
Pending Publication Date: 2022-04-26
TIANJIN UNIV
View PDF0 Cites 1 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
The SPDT switch not only occupies a large on-chip area, increases the cost, and limits the integration of the circuit, but also has a high insertion loss at high operating frequencies, which directly reduces the output power in the transmit (Tx) path ( Pout) and the system noise figure (NF) in the receive (Rx) path
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0078] The technical solutions of the present invention will be clearly and completely described below in conjunction with the embodiments of the present invention. Apparently, the described embodiments are only some of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.
[0079] In the description of the present invention, it should be noted that unless otherwise specified and limited, the terms "installation", "connection" and "connection" should be understood in a broad sense, for example, it can be a fixed connection or a detachable connection. Connected, or integrally connected; it may be mechanically connected or electrically connected; it may be directly connected or indirectly connected through an intermediary, and it may be the internal communication of two co...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention discloses a bidirectional amplifier based on a parasitic parameter fusion matching technology. The bidirectional amplifier comprises multiple stages of amplifier sub-networks, the first-stage amplifier sub-network is positioned on a signal input side and is connected with the GSG input probe positioned on the leftmost side through an input matching network; the last-stage amplifier sub-network is located on the signal output side and is connected with the GSG output probe located on the rightmost side through an output matching network; any two adjacent stages of amplifier sub-networks are connected through an inter-stage matching network. The two-way amplifier based on the parasitic parameter fusion matching technology is scientific in design, different parasitic parameters of the transistor in the on-off state are fused into the matching circuit design, sharing of a receiving link matching network and a transmitting link matching network is achieved, a single-pole double-throw switch in a communication system can be eliminated, and the area of a chip is reduced.
Description
technical field [0001] The invention relates to the technical field of integrated circuit amplifiers, in particular to a bidirectional amplifier based on parasitic parameter fusion and matching technology. Background technique [0002] With the rapid development of mobile communication technology, the currently allocated frequency bands can no longer meet the needs of the Internet of Everything in the future. Exploring towards higher frequency bands is a popular direction for the development of communication technology today. At present, high-frequency communication has been widely used in various fields, such as satellite reception, base station, navigation, medical treatment, transportation, imaging, etc. With the continuous development of the high-frequency communication industry, high-frequency equipment will achieve full coverage in various fields. [0003] Currently, traditional time-division duplex transceivers typically use a single-pole-double-throw (SPDT) switch t...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More IPC IPC(8): H03F3/62H04B1/48
CPCH03F3/62H04B1/48
Inventor 王毓孟凡易
Owner TIANJIN UNIV