Ultra-narrow-band electromagnetic wave asymmetric transmission super-structure device
An asymmetric and electromagnetic wave technology, which is applied in the field of artificial electromagnetic materials and terahertz science, can solve problems such as the inability to realize asymmetric transmission of electromagnetic waves with a single frequency, and achieve the effect of asymmetric transmission and high circular dichroism
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[0023] Example 1:
[0024]An ultra-narrow band electromagnetic wave asymmetrical transmission superstructure device, such as Figure 1 As shown, rectangular asymmetrically open block 1 arranged periodically by N rows of M columns is connected by connector 2; N and M are positive integers.
[0025] as Figure 2 and Figure 3 As shown, the rectangular asymmetrical opening block 1 is 90 μm long l and the width w is 60 μm, its long side has a square opening, the square opening size g is 8 μm, and the distance d d between the square opening center and the geometric center of the rectangular asymmetrical opening block 1 is 18 μm.
[0026] Rectangular asymmetrical opening block 1 and connector 2 are made of high-impedance silicon with a thickness of 50 μm.
[0027] The row-period constant Px and column-period constant Py are both 160 μm per arrangement of rectangular asymmetrical open block 1.
[0028] The rectangular asymmetrical opening block provided in the present embodiment is an all...
Example Embodiment
[0030] Example 2:
[0031] Based on the above example 1, the rectangular asymmetrical opening block 1 and the connector 2 use a high-impedance silicon material with a dielectric constant of 11.9, whereby the device operates at a frequency of 1.47187THz and a diffraction limit frequency of 1.87THz.
[0032] In the art, the absolute value of circular dichroism (CD) describing the asymmetric transmission performance of the hypersurface is a frequency ω with a bound state 0 and emissivity γ 0 Related functions, expressed as:
[0033]
[0034] where m 1 ,m 2 ,n 1 ,n 2Determined by the structural parameters, they are not equal to each other, indicating the coupling coefficient between the circularly polarized eigenmode of the device and the external circularly polarized excitation wave. The device design of the present embodiment is intended to have a spike in the absolute value of the CD at the operating frequency of 1.47187THz, and the width of the spike is negligible at the THz sc...
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