SiC MOSFET-based voltage clamping sub-module and solid-state switch

Abstract

The invention provides a SiC MOSFET-based voltage clamping submodule and a solid-state switch, and belongs to the technical field of high-voltage solid-state switches, and the submodule comprises two SiC MOSFET switch tubes, three clamping diodes, a capacitor and two resistors. Due to the existence of one clamping diode, the voltage of the buffer capacitor is maintained at a steady-state value when the sub-module is in a conducting state, and the voltage rising speed of the sub-module is increased when the sub-module is turned off. The peak voltage is absorbed during turn-off, so that the voltage oscillation of the peak part is weakened, the turn-off transient process is accelerated, the voltage overload capacity is improved, and the application range is wider; when the two bridge arms are conducted at the same time, current can be equally divided, the current-carrying capacity is improved, and the use scene of the voltage clamp sub-module is further expanded; when a load has reverse current due to other faults, the reverse current can be equivalent to a charging loop of a buffer capacitor, so that the energy of the fault current is transferred to be stored, the reverse current is inhibited, and the reliability of the system is improved.

Description

technical field [0001] The invention belongs to the technical field of high-voltage solid-state switches, and more particularly, relates to a SiC MOSFET-based voltage clamp sub-module and a solid-state switch. Background technique [0002] Electron Cyclotron Resonance Heating (ECRH) is an important auxiliary heating method for nuclear fusion-related experiments. However, the electron cyclotron, the core component of the ECRH system, is very fragile. The tube will be exposed to a lot of energy and may be damaged, so it is necessary to quickly cut off its power supply to limit the energy that can flow to the load. In order to protect the load and improve the experimental efficiency, a high-voltage switching device needs to be designed between the high-voltage power supply and the load, which can turn off the fault current within 10 microseconds and limit the turn-off energy to within a few joules. [0003] High-voltage switches can be divided into three categories: mechanical...

AI Technical Summary

Problems solved by technology

[0005] Aiming at the defects and improvement needs of the prior art, the present invention proposes a voltage clamping sub-module and a solid-state switch based on SiC MOSFET, aiming to solve technical problems such as slow switching speed, weak overload capacity and long response time in the field of high-voltage solid-state switches

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