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Memory device

A memory, spin-orbit technology, applied in the manufacture/processing of electromagnetic devices, electro-solid devices, semiconductor devices, etc., can solve problems such as limited and reduced switching energy of SOT-MRAM

Pending Publication Date: 2022-06-24
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, there is a limit to further reducing the switching energy of SOT-MRAM

Method used

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Embodiment Construction

[0072] The following disclosure provides many different embodiments or examples for implementing different features of the provided objects. Specific examples of components and arrangements are set forth below to simplify the present disclosure. Of course, these are examples only and are not intended to be limiting. For example, forming a first feature on or on a second feature in the following description may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which the first Embodiments in which additional features may be formed between a feature and a second feature such that the first feature and the second feature may not be in direct contact. Additionally, this disclosure may reuse reference numbers and / or letters in various instances. Such re-use is for the purpose of brevity and clarity and does not in itself indicate a relationship between the various embodiments and / or configurations discussed...

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Abstract

A memory device is provided. A memory device includes a substrate, a spin-orbit torque layer, and a magnetic tunnel junction. A magnetic tunnel junction and a spin-orbit torque layer are stacked over a substrate, and include a synthetic free layer, a barrier layer, and a reference layer. The synthetic free layer includes a synthetic antiferromagnetic structure, a first spacer layer, and a free layer, wherein the synthetic antiferromagnetic structure is disposed between the spin-orbit torque layer and the free layer. The barrier layer is disposed beside the synthetic free layer. The reference layer is disposed beside the barrier layer.

Description

technical field [0001] Embodiments of the present disclosure relate to memory devices. Background technique [0002] Magnetic random access memory (MRAM) is one of the main candidates for next-generation memory technology, which aims to surpass the performance of various existing memories. MRAM offers comparable performance to volatile static random access memory (SRAM) and comparable density and lower power to volatile dynamic random access memory (DRAM). consumption. Compared to non-volatile flash memory, MRAM offers faster access speeds and suffers minimal degradation over time. Spin orbit torque MRAM (spin orbit torque MRAM; SOT-MRAM) is a type of MRAM. Compared with another type of MRAM, spin transfer torque MRAM (spin transfer torque MRAM; STT-MRAM), SOT-MRAM offers better performance in terms of speed and endurance. However, further reducing the switching energy of SOT-MRAM is limited. Contents of the invention [0003] A memory device according to an embodimen...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/08H01L27/22H10N50/10H10N52/80H10N52/00H10N52/01
CPCH10B61/20H10B61/00H10N50/10H10B61/22H10N50/85H10N52/80H10N52/00H10N52/01
Inventor 黄彦霖宋明远李乾铭林世杰
Owner TAIWAN SEMICON MFG CO LTD
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