Film bulk acoustic resonator and preparation method thereof
A thin-film bulk acoustic wave and resonator technology, applied in impedance networks, electrical components, etc., can solve problems such as acoustic wave energy loss
Active Publication Date: 2022-07-08
深圳新声半导体有限公司
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[0003] The traditional thin film bulk acoustic resonator is a sandwich structure in which a piezoelectric film is sandwiched between two layers of conductive electrodes. The upper and lower electrode structures are planar and symmetrical in the vertical direction. This structure will cause acoustic energy Severe losses in the vertical direction
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[0045] The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.
[0046] Based on the content in the background art, refer to figure 1 , figure 1 is the schematic diagram of the traditional thin-film bulk acoustic wave resonator, such as figure 1 As shown, the traditional thin-film bulk acoustic wave resonator is a sandwich-like structure in which a piezoelectric film 12 is sandwiched between two layers of conductor electrodes, an upper electrode 13 and a lower electrode 11, and the structure of t...
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The invention provides a film bulk acoustic resonator and a preparation method, in the film bulk acoustic resonator, a wavy first electrode formed by protrusions and / or recesses and a wavy second electrode formed by protrusions and / or recesses are arranged oppositely, for example, the protrusions of the first electrode and the protrusions of the second electrode are arranged oppositely, and the protrusions of the first electrode and the protrusions of the second electrode are arranged oppositely. The recesses of the first electrodes and the recesses of the second electrodes are arranged oppositely, and the protrusions and the recesses formed by the first electrodes and the second electrodes can reduce leakage of sound wave energy in the vertical direction. And the piezoelectric layer is arranged between the first electrode and the second electrode, and the thickness of any position is the same, so that the acoustic signals with the same frequency can be coherently superposed, and the leakage of acoustic energy in the vertical direction can be effectively reduced. The first electrode and the second electrode form a convex and concave structure, and the thickness of any position of the piezoelectric layer is the same, so that the quality factor and the optimal value of the resonator are effectively improved.
Description
technical field [0001] The invention relates to the technical field of radio frequency filtering, and more particularly, to a thin-film bulk acoustic wave resonator and a preparation method. Background technique [0002] The acoustic wave device of Film Bulk Acoustic Resonator (FBAR) has the characteristics of small size, low cost, high quality factor (Q), strong power tolerance, high frequency and compatibility with IC technology. Communication systems and ultra-trace biochemical detection fields have broad application prospects. [0003] The traditional thin-film bulk acoustic wave resonator is a sandwich structure with a piezoelectric film sandwiched between two layers of conductor electrodes. The upper and lower electrode structures are planar and symmetrical in the vertical direction. This structure will lead to acoustic wave energy. There is severe loss in the vertical direction. SUMMARY OF THE INVENTION [0004] In view of this, in order to solve the above problem...
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IPC IPC(8): H03H9/02H03H3/02
CPCH03H9/02015H03H9/02086H03H3/02H03H2003/023
Inventor 吴淑娴吴宗霖钱航宇唐供宾邹洁
Owner 深圳新声半导体有限公司