MOCVD (Metal Organic Chemical Vapor Deposition) device and method capable of reducing epitaxial growth surface particles

Abstract

The invention discloses an MOCVD (Metal Organic Chemical Vapor Deposition) device and method capable of reducing epitaxial growth surface particles, and the method comprises the following steps: providing the MOCVD device which comprises a transfer box, a first reaction cavity adjacent to the transfer box and a second reaction cavity adjacent to the transfer box, in addition, aiming at the device, the invention also provides a material growth method for reducing the surface particles. The substrate for growing the In-component-containing material is located in the first reaction cavity, and the substrate is located in the second reaction cavity when the In-component-free material is grown. By using the device and the method, particles on the surface of the epitaxial wafer can be effectively reduced, and the yield is improved.

Description

technical field [0001] The invention belongs to the field of semiconductor material growth, and in particular relates to an MOCVD device and method capable of reducing epitaxial growth surface particles. Background technique [0002] In recent years, MOCVD has been widely used in the field of III-V material growth. It has good interface characteristics and growth efficiency. At present, common devices such as HBT, LED, LD and VCSEL can be grown by MOCVD. The grown material system There are GaAs series, InP series and GaN series. In these material systems, In-containing film layers, such as InGaAs, InGaP, and InGaN, are often grown. [0003] When the In-containing film layer is grown in the material system, the indium source of MO is easy to form indium-rich particles in the chamber due to its easy precipitation at low temperature, thereby contaminating the surface of the epitaxial wafer, especially for a horizontal growth chamber. After the source is ejected from the shower...

AI Technical Summary

Problems solved by technology

For the gas flow containing In, the higher the temperature, the longer the pre-reaction path, and the fewer In-rich particles fall on the surface of the substrate. For III-V materials, In is mostly used in the active area, such as InGaAs, InGaN, etc., are usually thinner and can tolerate a slightly slower growth rate. However, for GaAs, AlGaAs, GaN, and AlGaN that do not contain In, it is often necessary to grow thicker, and the long pre-reaction path causes low growth rate. The growth rate is not conducive to cost control. Based on this, the present invention proposes a dual-chamber MOCVD device that can reduce surface particles and take into account growth efficiency. Materials containing In and materials that do not contain In are placed in two chambers with different structures, and Correspondingly propose a material growth method

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