Epitaxial method for nitrifier material

Abstract

The invention discloses a low-cost epitaxial method for a high-performance nitride material, which comprises the steps of: adopting a patterned substrate or a stress release layer as a substrate; adopting a metal-organic chemical vapor deposition (MOCVD) mode to grow a nucleating layer; adopting a hydride vapor phase epitaxy (HVPE) mode to grow a (AlGaIn)N buffer layer; and adopting the metal-organic chemical vapor deposition (MOCVD) mode to grow a device structure of an optoelectronic material. The method can realize the low-cost growth of high-performance nitride epitaxial materials and exert the maximum performance of the combination of the HVPE and the MOCVD.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, in particular to a growth method designed for the growth of high-quality nitride epitaxial structure materials at low cost, which can be combined with metal organic hydride vapor phase epitaxy (MOHVPE) or independent halide source metal organic chemical vapor phase Deposition (SHMOCVD) is achieved. Background technique [0002] The spectrum of nitride multi-system materials is from 0.7ev to 6.2ev, which can be used for interband emission, and the color covers from infrared to ultraviolet wavelengths. In optoelectronic applications, such as blue light, green light, ultraviolet light-emitting diode (LED), short wavelength Laser diodes (LD), ultraviolet detectors, and Bragg reflection waveguides have gained important applications and developments. In addition, gallium nitride (GaN) material, as one of the representatives of the third-generation semiconductor materials, has excellent properti...

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Problems solved by technology

[0004] However, due to the limitation of HVPE growth rate and hot wall reactor, the nucleation layer is often difficult to achieve high quality, and it is necessary to use nitride templates grown by MOCVD to truly achieve high-quality thick film growth, making HVPE There is a great dependence on MOCVD; at the same time, the growth rate of HVPE is too fast for growing fine device structures. At this time, it is necessary to use the high-precision control of MOCVD to achieve this. This is also the reason why people develop and design metal organic hydride gas phase. Causes of Epitaxy (MOHVPE) or Independent Halide Source Metal Organic Chemical Vapor Deposition (SHMOCVD)

[0005] In addition, limited to the small critical thickness of heteroepitaxial GaN (for example, the critical thickness of GaN on sapphire is less than 8 microns), to grow GaN exceeding 20 microns requires means such as lateral epitaxy. At this time, there is a need for nitride epitaxy grown by MOCVD. This will lead to a substantial increase in the production cost of HVPE grown GaN thick film, and a significant decrease in production efficiency. In addition, this secondary epitaxy also greatly increases the probability of contamination of nitride material growth.

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