Iterative model establishment method and simulation method of cross-point storage array

Abstract

The invention discloses an iterative model establishment method and a simulation method of a cross point storage array, and belongs to the field of information storage and storage calculation integration, and the model is as follows: the simulation method comprises the following steps: (S1) initializing the voltage of each node in the array, and respectively forming a voltage matrix Vup and a voltage matrix Vdown by the voltages of the upper node and the lower node of each storage unit; (S2) calculating the current of each storage unit in the (k-1) th iteration according to Iarr [k-1] = Gcircle (Vup-Vdown), and calculating the total current flowing through each word line and each bit line; (S3) updating the upper node voltage and the lower node voltage of each storage unit in the k-th iteration so as to update Vup and Vdown; and (S4) iteratively executing the steps (S2)-(S3) until the error of the k-th iteration is smaller than epsilon than that of the last iteration, or the maximum number of iterations is reached. According to the invention, the time and space complexity of simulating the cross point array can be reduced.

Description

technical field [0001] The invention belongs to the field of information storage and storage-computation integration, and more particularly, relates to an iterative model establishment method and a simulation method of a cross-point storage array. Background technique [0002] Resistive memory, magnetoresistive memory, phase change memory, etc., use the high and low values ​​of the resistance of the memory cell to represent the stored information. In these memories, the memory cell is sandwiched between the word line and the bit line to construct a cross-point memory array, in which , Resistive memory is the most commonly used cross-point memory array. Applying forward or reverse pulses exceeding a certain amplitude to both ends of the memory cells of the cross-point memory array can change the resistance value of the memory cells, while applying a small read voltage to it, the memory can be judged by the magnitude of the outflow current. resistance value. Due to the exist...

AI Technical Summary

Problems solved by technology

[0007] In general, the traditional method establishes a model of the cross-point storage array based on linear equations, and performs simulation based on this model, which has high time complexity and space complexity, low simulation efficiency, and high simulation overhead

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