Semiconductor device with mixed gate/electrical interruption and method of manufacturing same

Abstract

Semiconductor devices with mixed gate / electrical disruption and methods of making the same are presented that allow electrical or diffusion disruption between transistor devices of one level of stacked transistor devices without having to require the presence of similar electrical or diffusion disruption in another level of stacked transistor devices. It is also proposed that an electrical interruption between transistor devices may be formed by providing a channel of a first polarity and a dummy gate comprising work function metals of opposite polarity.

Description

technical field [0001] The present invention relates generally to stacked transistor structures, and more particularly, to structures and methods for selectively providing electrical and diffusional interruptions between stacked transistors. Background technique [0002] This Background section is merely intended to provide those skilled in the art with a background for understanding the inventive concepts disclosed herein. Accordingly, this Background section may contain patentable material and its inclusion in this section should not be taken as an admission that the art already exists. [0003] Diffusion disruption in semiconductor devices generally brings two different functions to the semiconductor device. First, they provide enhanced electrical isolation for adjacent transistor devices, and second, they provide a barrier to the diffusion of dopants or contaminants from one transistor to another. Diffusion interruptions typically consist of bulk dielectric material th...

AI Technical Summary

Problems solved by technology

[0004] However, difficulties may arise when building 3D ICs because it may not be desirable to form diffusion breaks that cut two or more levels of transistors

Images