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Method for manufacturing semiconductor device

A semiconductor and device technology, applied in the field of manufacturing semiconductor devices

Pending Publication Date: 2022-07-29
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, integrated fabrication of GAA features around nanowires can be challenging
For example, while current approaches are satisfactory in many respects, challenges related to forming strain enhancement, source / drain formation, and other features make current approaches not satisfactory in all respects

Method used

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  • Method for manufacturing semiconductor device
  • Method for manufacturing semiconductor device
  • Method for manufacturing semiconductor device

Examples

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Embodiment Construction

[0017] The following disclosure provides many different embodiments or examples for implementing different features of the presented subject matter. Specific examples of components and arrangements are set forth below to simplify the present disclosure. Of course, these are examples only and are not intended to be limiting. For example, in the following description, forming a first feature on or on a second feature may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which the first feature is formed in direct contact with the second feature. Embodiments in which additional features may be formed between a feature and a second feature such that the first feature and the second feature may not be in direct contact. Additionally, the present disclosure may reuse reference numbers and / or letters in various instances. Such reuse is for brevity and clarity, and does not in itself represent a relationship ...

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PUM

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Abstract

The embodiment of the invention discloses a method for manufacturing a semiconductor device. The method includes forming a transistor device in a first device region on a semiconductor device; and forming a memory device in a second device region on the semiconductor device, the memory device connected to the transistor device. In some embodiments, forming a memory device includes: forming a first bit line; forming a first word line connected to the first bit line; forming a plate line connected to the first word line and the first bit line; forming a second bit line connected to the plate line; and forming a second word line connected to the second bit line and the plate line.

Description

technical field [0001] Embodiments of the present invention relate to a method of fabricating a semiconductor device. Background technique [0002] As semiconductor technology advances, there is an increasing demand for faster devices and higher storage capacities. To scale down transistors, the semiconductor industry continues to scale semiconductor devices such as fin field effect transistors (fin field effect transistors) including semiconductor fins with high aspect ratios in which channel regions and source / drain regions are formed. finFET)) are scaled down. The gate structure is formed over and along the sides of the fin (eg, surrounding the sides of the fin), thereby providing the advantage of increased surface area of ​​the channel. [0003] To scale down memory cells, the semiconductor industry has been reducing lateral device size to reduce device size, while increasing vertical size to increase memory charge storage. The semiconductor industry has also been exp...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/1159H01L27/11585H10B51/30H10B51/00
CPCH10B51/00H10B51/30H01L29/42392H01L29/78391H01L29/78696H01L29/66545H01L29/66439H01L29/0673H01L29/775H01L29/40111H10B51/10H01L29/0665H01L29/66742H01L21/0259H01L29/6684
Inventor 程仲良
Owner TAIWAN SEMICON MFG CO LTD