Radio frequency tube shell preparation method, power amplifier module packaging method and power amplifier module

Abstract

The invention provides a preparation method of a radio frequency tube shell, a power amplifier module packaging method and a power amplifier module. The preparation method of the radio frequency tube shell comprises the following steps: preparing a via hole penetrating through the upper surface and the lower surface of a dielectric substrate in the dielectric substrate; after metal seed layers are sputtered on the via holes and the upper and lower surfaces of the dielectric substrate, a front metal pattern and a back metal pattern are prepared on the upper and lower surfaces of the dielectric substrate respectively; local thickening is carried out on the front metal pattern and the back metal pattern respectively, and a front metal enclosure frame and a bottom heat sink are prepared; and selecting an area from the metal enclosure frame as a chip mounting area, and removing the part of the dielectric substrate in the chip mounting area to prepare the radio frequency tube shell. According to the radio frequency tube shell prepared by the method, the electroplated pure copper is used as the bottom plate of the tube shell, the chip is mounted on one surface, and the other surface is directly used as the external mounting surface of the tube shell, so that heat dissipation and grounding effects are ensured, and meanwhile, the radio frequency tube shell can be led out nearby so as to ensure good high-frequency characteristics.

Description

technical field [0001] The application belongs to the technical field of microwave components, and in particular relates to a preparation method of a radio frequency tube case, a power amplifier module packaging method and a power amplifier module. Background technique [0002] With the development of semiconductor technology, the power of a single amplifier has been increased from tens of watts to hundreds of watts. But the power consumption of the chip increases sharply with the increase of the operating frequency. Especially when the operating frequency reaches above 50GHz, the power amplifier chip has nearly half of the power dissipation. Chips require well-dissipated case protection to function properly. At the same time, when working under high frequency conditions, the chip is very sensitive to grounding. It is best that the mounting area of ​​the chip is all grounded. In order to meet the needs of heat dissipation, grounding and high reliability at the same time, ...

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Problems solved by technology

[0004] In view of this, the present invention provides a method for preparing a radio frequency shell, a method for packaging a power amplifier module, and a power amplifier module, aiming to solve the problem that the preparation of the radio frequency shell in the prior art cannot meet the needs of high-frequency and high-power power amplifiers

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