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CVD reactor and method for adjusting surface temperature of substrate

A surface temperature and reactor technology, which is applied in semiconductor/solid-state device manufacturing, coating, gaseous chemical plating, etc., can solve unfeasible problems

Pending Publication Date: 2022-08-05
AIXTRON AG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In temperature gradients the temperature changes sharply and since only actual values ​​from the past are available for regulation, it is not feasible to use state-of-the-art regulation algorithms

Method used

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  • CVD reactor and method for adjusting surface temperature of substrate
  • CVD reactor and method for adjusting surface temperature of substrate
  • CVD reactor and method for adjusting surface temperature of substrate

Examples

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Embodiment Construction

[0017] figure 1 and figure 2 The CVD reactor shown has a casing 1 which is gas-tight to the outside. Inside the housing 1 there is a disk-shaped base 2 , for example made of graphite or coated with graphite. Below the susceptor 2 is a heating device 9 by means of which the susceptor 2 can be heated to the susceptor temperature ST. The base 2 is carried by a shaft 10 which is rotatable about an axis. Extending within the shaft 10 is an input line 8 which is fed by a mass flow controller 20 . Each of the five input lines is supplied by a mass flow controller 20, wherein the mass flow controller 20 is supplied by a gas source 19 with an inert gas, such as hydrogen or nitrogen or a noble gas. In the upper side of the susceptor 2 facing the processing chamber 14 there are in each case five storage spaces for the substrates 4 , each of which is formed by a substrate holder 3 . These substrate holders 3 may be constructed of the same material as the base 2 , eg in the form of g...

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PUM

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Abstract

The invention relates to a CVD reactor and to a method for controlling / regulating the surface temperature of a substrate arranged in the CVD reactor, said substrate being arranged on a substrate holder (3), which is supported, for example, by a dynamic air cushion, in which actual values (Tn) associated with the surface temperature of the substrate holder (3) are measured in each case in sequence, and the surface temperature is adjusted to a common value by changing the height of the air cushion (7). According to the invention, after each measurement of the actual value (Tn) of the measured surface temperature associated with the substrate holder (3), a value (MT) is determined using the last measured actual value (Tn) of the surface temperature of the substrate holder (3), and the difference between the actual value (Tn) measured during the measurement and the value (MT) is calculated, according to the invention, a difference value (dTn) associated with the substrate holder (3) is calculated on the basis of the value (MT), and an approximate actual value (Tn ') for at least one other substrate holder (3) is calculated by adding the associated difference value (dTn) to the value (MT), said approximate actual value being used for regulation / control.

Description

technical field [0001] The invention relates to a method for controlling / regulating the surface temperature of a substrate, which is arranged in a processing chamber of a CVD reactor on a substrate holder assigned to a susceptor, wherein the respective measurements of the substrate holder are successively measured. The actual value of the surface temperature, and the surface temperature is adjusted to a common value by changing the parameters. Said parameter may be the height of the air cushion, in particular the height of the dynamic air cushion, which air cushion carries the substrate holder forming the substrate holder. Said parameter may also be the composition of the air stream forming the air cushion. [0002] The invention also relates to a device in the form of a CVD (chemical vapour deposition) reactor for carrying out the method, which device has a plurality of substrate holders associated with a susceptor, each of which can be formed by a dynamic air cushion The s...

Claims

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Application Information

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IPC IPC(8): C23C16/458H01L21/67H01L21/687C23C16/46
CPCC23C16/4584C23C16/46H01L21/68771H01L21/67109C23C16/4586H01L21/67248H01L21/68764C23C16/52
Inventor R.莱尔斯
Owner AIXTRON AG