Plasma processing device, electrostatic chuck, and manufacturing method of electrostatic chuck

Abstract

The invention provides a plasma processing device and an electrostatic chuck thereof and a manufacturing method of the electrostatic chuck. The electrostatic chuck comprises a metal pedestal. Heating devices are arranged on the metal pedestal. Heat-conducting plates are arranged on the heating devices. Ceramic insulating layers are arranged on the heat-conducting plates. Height of the heating devices to a substrate and height of the heat-conducting plates to the substrate are different, and heat-conducting adhesive layers with controllable thickness are arranged between the ceramic insulating layers and the heat-conducting plates so that uniform surface temperature of the ceramic insulating layers or multi-parameter adjustment with specific temperature gradient can be realized. Power supply power of the heating devices can be adjusted, and adjustment of surface temperature of the ceramic insulating layers can be also realized by adjusting height difference of the heating devices of different heating areas, thickness of the heat-conducting plates of different heat areas and thickness of the heat-conducting adhesive layers between the ceramic insulating layers and the heat-conducting plates so that temperature controllability of the electrostatic chuck can be greatly increased, and rapid adjustment of temperature uniformity or specific gradient of different areas of the electrostatic chuck is facilitated.

Description

technical field [0001] The present invention relates to a semiconductor processing technology, and more particularly, to the technical field of an electrostatic chuck. Background technique [0002] In processes such as plasma etching or chemical vapor deposition, an electrostatic chuck (ElectroStatic Chuck, ESC for short) is often used to fix, support and transfer a substrate (Wafer) to wait for a workpiece to be processed. The electrostatic chuck is arranged in the reaction chamber, which uses electrostatic attraction instead of mechanical means to fix the substrate, which can reduce the possible mechanical loss to the substrate, and make the electrostatic chuck and the substrate completely contact, which is conducive to heat conduction . [0003] The existing electrostatic chuck usually includes an insulating layer, a heating layer and a metal base supporting the insulating layer and the heating measuring layer, and a DC electrode is arranged in the insulating layer, and ...

AI Technical Summary

Problems solved by technology

[0004] In the prior art, due to the large area of ​​the electrostatic chuck, it is difficult to ensure the uniformity of the temperature in each area of ​​the electrostatic chuck while the electrostatic chuck is rapidly heating up, and the temperature in different areas will have obvious differences and even form cold areas. And the hot zone, resulting in uneven heating of the substrate by the electrostatic chuck, which will have a negative impact on the process effect of plasma etching

In the prior art, in order to solve the technical problem of uneven heating of the electrostatic chuck, the heating layer can be controlled by partition, but in some plasma processing devices, only the heating layer is controlled by partition and cannot completely solve the problem of uneven temperature distribution of the electrostatic chuck

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