Multi-layer stacked star-shaped parallel current-sharing connection structure and connection method thereof
A multi-layer stacking and flow connection technology, which is applied to semiconductor/solid-state device components, semiconductor devices, electrical components, etc., can solve the problems of asymmetrical heat dissipation structure, large temperature rise, and inability to make full use of the space in the vertical direction. Achieve the effect of reducing uneven current problems and high current on-off capability
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[0031] The following description serves to disclose the invention to enable those skilled in the art to practice the invention. The preferred embodiments described below are given by way of example only, and other obvious modifications will occur to those skilled in the art. The basic principles of the invention defined in the following description may be applied to other embodiments, variations, improvements, equivalents, and other technical solutions without departing from the spirit and scope of the invention.
[0032] In the preferred embodiment of the present invention, those skilled in the art should note that the thyristor and the like involved in the present invention may be regarded as the prior art.
[0033] Preferred embodiment.
[0034] The invention discloses a multi-layer stacked star parallel connection method for current sharing, which is used to realize the current sharing of thyristors, comprising the following steps:
[0035] Step S1 : the first thermally ...
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