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Method for manufacturing semiconductor integrated circuit device, optical mask used therefor, method for manufacturing the same, and mask blanks used therefor

An integrated circuit and semiconductor technology, applied in the field of exposure technology, can solve problems such as deterioration of detection accuracy or pattern transfer accuracy, generation of barrier films, short circuits or open circuits, etc.

Inactive Publication Date: 2005-07-06
RENESAS ELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the above technique, when the photomask is installed on the defect detection system or the alignment machine, the barrier of the photomask directly contacts the photomask holder (such as the vacuum holder) of the defect detection system or the alignment machine, so that foreign substances are generated at the rupture or peeling of the barrier film
These foreign substances adhere to the surface of lenses such as inspection systems or aligners, pollute the inner wall of the chamber, or adhere to the surface of semiconductor wafers, resulting in deterioration of detection accuracy or pattern transfer accuracy, and defects such as short-circuit or open-circuit defects in patterns. ; thus the reliability and yield of semiconductor integrated circuit devices decrease, which is another problem

Method used

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  • Method for manufacturing semiconductor integrated circuit device, optical mask used therefor, method for manufacturing the same, and mask blanks used therefor
  • Method for manufacturing semiconductor integrated circuit device, optical mask used therefor, method for manufacturing the same, and mask blanks used therefor
  • Method for manufacturing semiconductor integrated circuit device, optical mask used therefor, method for manufacturing the same, and mask blanks used therefor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0149] Fig. 1A is a plan view of a photomask used in a method for fabricating a semiconductor integrated circuit according to an embodiment of the present invention, Fig. 1B is a cross-sectional view taken along line AA in Fig. 1A, and Fig. 1C is shown in Figs. 1A and 1B Shows a cross-sectional view of the photomask, describing the state of mounting the photomask on a predetermined device. The dashed line in Fig. 1A is used to make the description easier to understand and is not formed in the actual product.

[0150] According to Embodiment 1, the photomask 1PA1 is a reticle used to map and transfer the original image of the semiconductor integrated circuit pattern to the semiconductor wafer by reducing the projection optical system or the like, for example, it is five times the actual size, In the projection aligner, this reticle is used as a light source in the projection aligner, such as argon fluoride (ArF) stimulated laser beam (wavelength is 193nm) or fluorine gas (F 2 ) Vac...

Embodiment approach 2

[0175] This embodiment 2 is the same as the previous embodiment 1 except that the method of preparing the photomask 1PA1 is different from the embodiment 1.

[0176] In the case of preparing the above-mentioned ordinary photomask, when the barrier pattern used as the etching mask for forming the metal film pattern when forming the photomask pattern is formed by an electron beam writer or the like, The metal film is electrically connected to the ground, which can prevent static electricity during electron beam writing. Therefore, no anti-static treatment is required.

[0177] However, in the case of preparing the above-mentioned photomask 1PA1 according to the present invention, when an electron beam writer for forming a light blocking pattern is used to form a pattern on the blocking film IR, the radiated electrons can be prevented from escaping because of the mask substrate 1a and the barrier film 1R are similar to insulators; therefore, their being charged is not conducive to th...

Embodiment approach 3

[0182] In this embodiment 3, a light shielding area composed of a metal film is provided near the periphery of the mask substrate constituting the photomask, and openings are provided in the light shielding area, thereby forming alignment marks and alignment marks as described above. And so on, used to read the information detection pattern of the photomask related information. Except for this point, Embodiment 3 is the same as Embodiments 1, 2 above.

[0183] Fig. 12 illustrates a specific example of the photomask according to this third embodiment. Fig. 12A is a plan view of the photomask, Fig. 12B is a cross-sectional view along the line AA, and Fig. 12C is a cross-sectional view of the photomask, describing that the photomask shown in Figs. 12A and 12B is installed in a predetermined device On the status.

[0184] In this Embodiment 3, a light blocking pattern (light-shielding metal region) 1C is formed near the periphery of the main surface of the mask substrate 1a constituti...

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Abstract

In the semiconductor integrated circuit device manufacturing method, in order to suppress and prevent the generation of foreign substances, a photomask is constructed in such a way that a blocking film is used as a light shielding film for detection or exposure processing, and when the photomask 1PA1 is mounted on such as When the inspection device or the aligner is on the predetermined device, the state is such that the mounting portion 2 of the predetermined device is in contact with the main surface area of ​​the mask substrate 1a of the photomask 1PA1, in which no main surface of the mask substrate 1a is present. There are a light shielding pattern 1b and a mask pattern 1mr each formed of a barrier film.

Description

Technical field [0001] The present invention relates to a method for preparing a semiconductor integrated circuit, a photomask, a method for preparing the same, and a mask blank, especially a technology that can be effectively used for exposure technology in the process of semiconductor integrated circuit devices. Background technique [0002] In the preparation of semiconductor integrated circuit devices, photolithography is used as a method for transferring micropatterns onto semiconductor wafers. In photolithography, a projection exposure system is mainly used; the photomask pattern provided on the projection aligner is transferred to the semiconductor wafer to form a device pattern. [0003] The general photomask examined by the present inventors is formed by processing a light shielding substance such as chromium (Cr) or the like formed on a transparent quartz substrate. In other words, a light-shielding film composed of chromium or the like is formed in a desired shape on a...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F1/30G03F1/32G03F1/54G03F1/56G03F1/68G03F1/70G03F7/00G03F7/20G03F9/00
CPCG03F1/44G03F1/56G03F1/62G03F7/70983H01L21/027
Inventor 长谷川升雄寺泽恒男田中稔彦
Owner RENESAS ELECTRONICS CORP