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Electroluminescence display device

A technology of electroluminescence display and light-emitting layer, which is applied in the direction of electroluminescence light source, electric light source, lighting device, etc., and can solve the problems of decreased yield rate, defective products, poor heat resistance, etc.

Inactive Publication Date: 2006-04-12
SANYO ELECTRIC CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since the light-emitting element layer 65 formed before the cathode Al layer has poor heat resistance, the entire Al layer cannot be heated, that is, there is no repair method up to now. Finally, it also becomes a defective product, resulting in the problem of a decline in the yield rate

Method used

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  • Electroluminescence display device
  • Electroluminescence display device
  • Electroluminescence display device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0034] For the EL display device of the present invention, utilize figure 1 and figure 2 Describe in detail.

[0035] figure 1 , is a cross-sectional view showing the organic EL device of the present invention. Each display pixel of the EL display device, the structure of the equivalent circuit diagram and the disclosed image 3 and Figure 4 The structures of are substantially the same, so the description is omitted.

[0036] First, the first TFT 30 which is a switching TFT will be described.

[0037] Such as figure 1 As shown in (a), on an insulating substrate 10 made of quartz glass, non-alkali glass, etc., a gate signal line that also serves as a gate electrode 11 made of a refractory metal such as chromium (Cr) or molybdenum (Mo) is fabricated. 51 and holding capacitor electrode wire 54.

[0038] Next, an active layer 13 is formed in the order of a gate insulating film 12 and a polysilicon (hereinafter referred to as “p-Si”) film, and a so-called LDD (Lightly Dop...

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PUM

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Abstract

To solve the problem on an aluminum cathode which is liable to be defective due to a pin hole or dust that water enters from a defective portion into an organic layer to preclude display on a screen, resulting in devices with the defective cathodes to be all handled as bad products. The thickness of the cathode is 2000 1 / 2 A-10000 1 / 2 A. The increased thickness permits dust and the damage on a hole transporting layer to be filled in a deposition process, therefore reducing the defects of the cathode. Since the increased thickness of an Al layer is only needed, the advantage of reducing the defects can be offered, without increasing special materials and processes.

Description

technical field [0001] The present invention relates to an electroluminescence (Electro Luminescence: hereinafter referred to as "EL") display device. Background technique [0002] In recent years, an EL display device using an EL element has attracted attention as a display device replacing a CRT or an LCD. [0003] Furthermore, an active matrix type EL display device having a TFT switching element to drive the EL element is also being developed. [0004] image 3 is a plan view showing one display pixel of an organic EL display device, Figure 4 It is an equivalent circuit diagram showing one display pixel of an organic EL display device, and FIG. 5(a) shows image 3 The cross-sectional view of line A-A in Fig. 5(b) is a representation along image 3 Sectional view of line B-B in middle. [0005] Such as image 3 and Figure 4 As shown, the area surrounded by the gate signal line 51 and the drain signal line 52 forms a display pixel. The first TFT 30 of the switching e...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H05B33/12H05B33/26G09G3/30H01L27/32H01L51/50H01L51/52
CPCH01L51/5221H01L2251/558H01L27/3244H10K59/12H10K2102/351H10K59/8052H05B33/26H10K50/82
Inventor 菱田光起西尾佳高松木宽
Owner SANYO ELECTRIC CO LTD