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Ti-Si carbide powder and its normal pressure synthesis process with Al as reaction assistant

A technology of reaction assistant and carbide powder, applied in the field of titanium silicon carbide powder and its synthesis, can solve the problems such as scratches on the surface of abrasives, adverse effects of material properties, and inability to meet the requirements

Inactive Publication Date: 2006-04-19
科沃智能装备技术武安有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This purity cannot meet the requirements of practical applications in many cases
For example, in the case of tribological applications, hard heterogeneous particles such as TiC contained in materials prepared with this powder may cause severe scratches on the abrasive surface
In addition, 2 to 10 wt% of NaF or AlF added by this preparation method 3 Most of NaF will remain in the prepared powder, which will have an adverse effect on the performance of the material

Method used

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  • Ti-Si carbide powder and its normal pressure synthesis process with Al as reaction assistant

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Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0019] Weigh 35.92 grams of titanium Ti powder, 7.02 grams of silicon Si powder, 6.01 grams of graphite powder, and 1.35 grams of aluminum Al powder, mix them in 50 grams of absolute ethanol medium, use agate ball milling for 4 hours, and bake in an oven at 60 °C After drying, grind, sieve, put into graphite mould, compact under 8MPa pressure, put into high temperature furnace, protect with argon, heat up to 1450°C at a rate of 20°C / min, keep warm for 8min, and heat for 10~ The furnace temperature was lowered to 60°C at a rate of 15°C / min, and the loose block formed by the reaction was taken out and ground to obtain Ti 3 SiC 2 Titanium silicon carbide powder with phase volume content greater than 98%.

Embodiment approach 2

[0021] Weigh 143.64 grams of titanium Ti powder, 28.09 grams of silicon Si powder, 24.02 grams of graphite powder, and 5.40 grams of Al powder, mix them in 50 grams of absolute ethanol medium, use agate ball milling for 2 hours, and dry them in an oven at 60 °C Finally, grind and sieve, put into graphite mold, compact under 8MPa pressure, put into high-temperature furnace, protect with argon, heat up to 1450°C at a rate of 40°C / min, keep it warm for 5min, and keep it for 10-15 The rate of ℃ / min lowers the furnace temperature to 60 ℃, and the loose block formed by the reaction is taken out and crushed to obtain Ti 3 SiC 2 Titanium silicon carbide powder with a phase volume content greater than 99%. Its X-ray diffraction pattern is as attached figure 1 As shown, it can be seen from the figure that only Ti 3 SiC 2 diffraction peaks.

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Abstract

The present invention features that the materials including Ti, Si, graphite powder and Al as reaction assistant in the molar ratio of 3 to 1 to 2 to 0.1-0.2 are compounded, ball milled for 2-6 hr to mix, dried at 60-70 deg.c in a stove, briquetted at 8-10 MPa, synthesized inside a high temperature furnace at 1430-1480 deg.c with protecting argon and with temperature raising rate of 20-40 deg.c / min and temperature maintaining time of 5-8 min, and cooled in the temperature lowering rate of 10-15 deg.c / min to obtain the Ti-Si carbide powder of the present invention.

Description

technical field [0001] The invention relates to a titanium silicon carbide powder and a synthesis method thereof. The powder is a new type of ternary carbide ceramic powder, which can be used as a raw material to prepare titanium-silicon carbide bulk materials and various Composite materials and devices. Background technique [0002] Titanium silicon carbide Ti 3 SiC 2 TiH was first described in 1967 by W.Jeitschko and H.Nowotny (Monatsh.Chem., 1967, 98:329-37) 2 , Si and graphite are obtained by chemical reaction at 2000 ° C, but the amount of synthesis is very small, which has no practical engineering application value. In 1996, M.W.Barsoum and T.El-Raghy (J.Am.Ceram.Soc., 1996, 79[7]: 1953-56) used Ti powder, graphite powder and SiC powder as raw materials, and synthesized in situ by hot pressing Method, under the protection of Ar gas at 1600 ℃, hot pressing at 40MPa for 4 hours, Ti 3 SiC 2 A polycrystalline bulk material with a volume fraction greater than 98%, an...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/58C04B35/622C22C29/00
Inventor 翟洪祥周洋艾明星黄振莺张志力李世波
Owner 科沃智能装备技术武安有限公司
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