Dry-process deep-etching silicon miero mechanical working method an glass substrate

Abstract

The invention discloses a tiny mechanical process method for glass substrate with whole-dry deep carved silicon. It uses double-surface photoetching, deep reaction ion etching and silicon-glass bonding technology; it realizes the movable suspending microstructure produce with low stress and big longitudinal size on the glass substrate. The invention is low cost and easy to be operated; the rate of finished products is high.

Description

technical field [0001] The invention relates to a micro-machining method for fully dry deep etching silicon on a glass substrate in the technical field of micro-electro-mechanical processing, and is especially suitable for the manufacture of various movable micro-electro-mechanical structural devices with low stress and large longitudinal dimensions . Background technique [0002] Micro-electro-mechanical system, also known as MEMS, refers to a controllable and movable micro-electromechanical device with a size below the millimeter level. The combination of these constitutes a system with specific functions, which has the advantages of light weight, small size, low cost and integration. MEMS technology emerged in the mid-1980s and developed rapidly in the early 1990s. At present, many developed countries in the world have given priority to the development of MEMS technology. The United States lists MEMS technology, aerospace technology and information technology as the th...

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Problems solved by technology

In the silicon-based process, the surface processing adopts a multi-layer thin film structure (generally less than 3 μm) and sacrificial layer corrosion technology. The production process is complicated and difficult to control. At present, there are few domestic applications. The bulk silicon process is mainly used, and the bulk silicon process is used most. The most important is the bulk silicon melting process, that is, the double-layer structure of silicon-glass bonding. Compared with the surface process, the bulk silicon process has a larger processing space (generally greater than 20 μm), but the traditional bulk silicon melting process requires a long time and high temperature. Diffusion of concentrated boron, which will bring greater stress to the device and cause structural deformation and performance degradation of the device. In addition, the traditional bulk silicon melting process requires special equipment to thin and polish the chip, which will make the processing The yield rate is greatly reduced, and the traditional bulk silicon melting process also requires a toxic wet etching process that is harmful to humans, so the traditional bulk silicon melting process has many shortcomings

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