Unlock instant, AI-driven research and patent intelligence for your innovation.

Semiconductor device and producing method thereof

A technology for semiconductors and devices, applied in the field of semiconductor devices and their manufacturing, can solve the problems of limited corrosion selectivity, limited material selection, and difficulty in obtaining lens shapes.

Inactive Publication Date: 2006-07-19
SHARP KK
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This makes it difficult to obtain a predetermined lens shape
[0014] Secondly, when using a lens-shaped resist as a mask for dry etching, it is difficult to obtain an intralayer lens with a uniform shape due to the inhomogeneity of the lens shape of the resist and the change of the etching speed.
Also, the choice of material is limited due to the limited etch selectivity between the resist and the lens material layer within the layer

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor device and producing method thereof
  • Semiconductor device and producing method thereof
  • Semiconductor device and producing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0023] There is no particular limitation on the substrate used in the present invention, as long as it is commonly used to fabricate semiconductor devices. For example, a semiconductor substrate composed of silicon and germanium, and a semiconductor substrate composed of SiC, SiGe, GaAs, AlGaAs can be used. Among them, a silicon substrate is preferable. The substrate can be doped with n-type or p-type impurities. Also, one or more n-type or p-type wells may be formed therein.

[0024] The substrate may be equipped with a light receiving portion or an emitting portion. Examples of the light receiving portion or the emitting portion include so-called Light-receiving elements of solid-state imaging devices, and all elements used as light-receiving portions or emitting portions in various devices such as light-emitting devices such as light-emitting diodes and light-transmission control devices such as liquid crystal panels.

[0025] The light receiving part or the emitting pa...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A semiconductor device including an overcoat layer of a transparent material disposed on a substrate, a projection formed on the overcoat layer, a convex intralayer lens of an inorganic material formed to include the projection as a core and a transparent film with a flat top surface formed on the convex intralayer lens.

Description

technical field [0001] The present invention relates to a semiconductor device and its manufacturing method. More specifically, it relates to a semiconductor device including an intralayer lens and a method of manufacturing the same, which is suitable for a solid-state imaging device such as a CCD (Charge Coupled Device) and a liquid crystal display device. Background technique [0002] CCD or MOS (Metal Oxide Semiconductor) type solid-state imaging devices have been used in various applications such as digital still cameras, camcorders, camera-equipped cellular phones, scanners, digital copying machines, facsimile machines, and the like. As applications continue to expand, higher performance and functions are increasingly required, such as increasing the number of pixels, improving light-receiving sensitivity, and reducing size and cost. [0003] As the size decreases and the number of pixels increases in solid-state imaging devices, the size of pixels disposed in the soli...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/14G02B3/00H04N5/335H01L27/146H01L31/0232H01L31/10H01L33/00H01L33/20H01L33/58H04N25/00
CPCH01L27/14627H01L27/14685H01L27/14
Inventor 仲井淳一吾乡富士夫
Owner SHARP KK