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Quantum dot memory based on longitudinal double barrier resonant tunneling structure

A technology of resonant tunneling and quantum dots, applied in the direction of electric solid-state devices, semiconductor devices, electrical components, etc., can solve the problem of reducing the thickness of the tunneling oxide layer

Inactive Publication Date: 2006-12-20
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

A vertical double-barrier resonant tunneling structure is used to replace the tunneling oxide layer (SiO2) in the traditional non-volatile memory 2 thin film), thus fundamentally solving the problems encountered when the thickness of the tunneling oxide layer in the prior art is reduced

Method used

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  • Quantum dot memory based on longitudinal double barrier resonant tunneling structure
  • Quantum dot memory based on longitudinal double barrier resonant tunneling structure

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Embodiment Construction

[0015] The quantum dot memory based on the longitudinal dual-barrier resonance tunneling structure proposed by the present invention is described in detail as follows in conjunction with the accompanying drawings and embodiments:

[0016] The multilayer structure of epitaxial growth on the N-Si substrate of the present invention is as figure 2 As shown, it is mainly composed of control gate 26, control oxide layer 25, SiGe quantum dot layer 24, SiGe / Si / SiGe / Si double barrier resonant tunneling layer 23 and SiGe channel layer 27, on both sides of the SiGe channel are source electrode 21 and drain electrode 22 .

[0017] This embodiment adopts following process to make:

[0018] In the above-mentioned quantum dot memory in this embodiment, the strained SiGe channel layer 27 is epitaxially grown on the N-Si substrate, and then SiGe is epitaxially grown on the channel. 0.5 Ge 0.5 (2nm) / Si(3nm) / Si 0.5 Ge 0.5 (2nm) / Si(3nm) double potential barrier resonant tunneling laminated ...

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Abstract

This invention relates to a quantum spots memory based on longitudinal double-barrier resonance cross structure and belongs to semi-conductor device design field. The basic structure comprises the multiple structures, source and drain electrodes orderly grown in the Si underlay. It is characterized by the following: the multiple structures comprise control grating electrode, quantum float grating layer, double-barrier resonance cross layer and SiGe channel.

Description

technical field [0001] The invention belongs to the field of semiconductor device design, in particular to the structural design of quantum dot memory. Background technique [0002] Memory is a very important type of device in semiconductor devices, rather than volatile memory, especially FlashMemory (flash memory) is developing rapidly and has an extremely wide range of applications, including from mobile phones, MP3 players to digital cameras, handheld computers, etc. Almost all portable digital products. As a very important type of product in memory, non-volatile memory is developing towards high density, high speed and low power consumption. [0003] At present, this kind of non-volatile memory mainly adopts polysilicon floating gate structure, which is epitaxial growth on Si substrate such as figure 1 The multi-layer structure shown is composed of source 11 and drain 12 , and the multi-layer structure is composed of control gate 16 , control oxide layer 15 , polysilic...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/10
Inventor 邓宁陈培毅潘立阳张磊魏榕山
Owner TSINGHUA UNIV