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Semiconductor device and its manufacturing method

A semiconductor and device technology, which is applied in the field of flexible semiconductor devices and its manufacturing, can solve problems such as cracking, uneven substrate film thickness, inability to set the film thickness arbitrarily, and the softness and light transmittance of the semiconductor layer.

Inactive Publication Date: 2007-05-02
SHARP KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0019] In addition, according to the method shown in FIGS. 6A-6I, there is an insulating film serving as a barrier layer within the V-shaped groove; therefore, there is a possibility that stress is concentrated in the V-shaped groove due to poor control when polishing the substrate. The bottom of the substrate causes uneven film thickness or cracks
Therefore, there is a problem that the film thickness cannot be set arbitrarily, and the semiconductor layer cannot have the required flexibility and light transmission.

Method used

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  • Semiconductor device and its manufacturing method
  • Semiconductor device and its manufacturing method
  • Semiconductor device and its manufacturing method

Examples

Experimental program
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Embodiment 1

[0050] The semiconductor device of Embodiment 1 is a semiconductor chip comprising an element portion A and a hard film portion B covering part or all of the periphery of the element portion A, as shown in FIGS. 1A and 1B. The component part A is composed of transistors, capacitors, resistors or their combination on a flexible electrical silicon substrate, the film thickness of the substrate is about 30 μm, and the size is 1mm×2mm. At least each side of the silicon substrate covered by the hard film portion B is perpendicular or substantially perpendicular to the surface of the silicon substrate. The hard film portion B is made of an insulating film such as a silicon oxide film and has a width of about 50 μm, and covers part or all of the periphery of the element portion A, as shown in FIGS. 1D and 1E .

[0051] Such a semiconductor chip can be produced by the following manufacturing method.

[0052] First, as shown in FIG. 2A, a semiconductor element (not shown) is formed on...

Embodiment 2

[0059] The semiconductor device of this example is basically the same as that of Example 1, except that the formation of through-holes in the hard film portion B and the formation of through-electrodes made of tungsten in the holes are different.

[0060] Such a semiconductor chip can be formed by a manufacturing method to be described below.

[0061] First, as shown in FIG. 3A, some recesses 12 are formed in a silicon substrate 11 (wherein a semiconductor element (not shown) has been formed), so that the side surfaces thereof are approximately perpendicular to the surface of the silicon substrate 11, which is the same as the method in Embodiment 1. the same.

[0062] Next, as shown in FIG. 3B, the recess 12 is filled with the silicon oxide film 13 as in the first embodiment. After that, a via hole is formed in a part of the silicon oxide film 13 by photolithography and etching. Then selectively fill the through hole with tungsten to form the through electrode 15 .

[0063]...

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Abstract

A semiconductor device, comprising: a semiconductor substrate providing a semiconductor element; and a hard film which covers a part or the entirety of a side of the semiconductor substrate and which has top and bottom surfaces in approximately the same planes as those of the top and bottom surfaces of the semiconductor substrate, wherein the side of the semiconductor substrate covered with the hard film is processed so as to be perpendicular or substantially perpendicular to the surface of the semiconductor substrate.

Description

technical field [0001] The present invention relates to a semiconductor device and a manufacturing method thereof, more particularly to a flexible semiconductor device and a manufacturing method thereof. Background technique [0002] The current trend is for devices such as mobile phones to become smaller and more portable, and wearable computers have been proposed as "personal computers you can wear". [0003] In addition, image and voice direct cognitive interface devices such as 3DMD (observed through a display installed on the head), HD with a built-in CCD camera, headset glasses, and a headset microphone have also been proposed, and wearable devices have been proposed. Think it will develop in the future. [0004] A method of converting TFT chips for AMLCD (Active Matrix Display) into thin films has been proposed as a measure to meet this need (see US Patent No. 5,702,963). [0005] According to this method, first, as shown in FIG. 4A, a substrate with an SOI structur...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/00H01L21/3205H01L21/4763H01L21/78H01L23/52H01L29/78
CPCH01L21/78H01L29/78
Inventor 德重信明
Owner SHARP KK