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Improved semiconductor memory structure

A memory and semiconductor technology, applied in static memory, digital memory information, information storage, etc., can solve problems such as errors, data line I/O interference, etc., achieve the effect of repairing semiconductor memory, avoiding interference, and increasing the pass rate

Inactive Publication Date: 2007-06-20
WINBOND ELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

As far as the first output setting device 130-1 is concerned, if the internal fuses f-1, f3~f-8 are incompletely blown, the output selection code S- of the first output setting device 130-1 1 Errors may occur, affecting the control of the first selection output device 132-1 on the selection data lines (102-1~102-M), causing interference between data line I / O
Similarly, if the internal fuses f-1 to f-7 of the second output setting device 130-2 are incompletely blown, the above-mentioned problem of interference between the data line I / O will also occur, and must be used Partially solved by special test pattern

Method used

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Embodiment Construction

[0083] In order to make the above-mentioned purposes, features, and advantages of the present invention more obvious and easy to understand, the preferred embodiments are specifically cited below, and in conjunction with the accompanying drawings, the detailed description is as follows:

[0084] FIG. 6 shows a circuit block diagram of the semiconductor memory of the present invention. The difference between the semiconductor memory of the present invention and the traditional semiconductor memory (FIG. 1) mainly lies in the redundant unit switcher, so for the sake of simplicity of description, except for the redundant unit switcher in FIG. 6, other components that are the same as those in FIG. The same symbols represent; and the functions, structures and features that have been described in Fig. 1 will not be repeated.

[0085] The components and devices that the semiconductor memory of the present invention comprises are described as follows respectively now:

[0086] A conv...

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Abstract

The improved semiconductor memory structure includes one conventional memory unit assembly, one conventional decoder, one redundant memory unit assembly, one redundant decoder, and one redundant unit switcher. The switcher has reduced fuse wire number in each set unit from conventional 2k to k, and this can reduce the probability of incomplete breaking and avoid the interference between data line I / O ports. The present invention has the function of repairing semiconductor memory, raised semiconductor memory qualified rate and reliability.

Description

technical field [0001] The invention relates to an improved structure of a semiconductor memory, which is used to avoid the problem of interference between memory data line I / O, so as to improve the qualification rate and reliability of the semiconductor memory. Background technique [0002] In the conventional technology, types of semiconductor memory include not only regular memory cell arrays, but also redundant memory cell arrays, which are used as spare memory cell arrays to improve manufacturing yield. [0003] As shown in FIG. 1 , the known semiconductor memory includes a conventional memory cell array 11 , a conventional decoder 12 , a redundant cell switcher 13 , and a redundant memory cell array 14 . [0004] The regular storage unit array 11 includes several regular storage units 11 (m, n), which are configured in a matrix structure of M columns and N rows, wherein M and N represent a first and a second positive integer (not less than 2), 1≤m≤M and 1≤n≤N. That i...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C11/34G11C11/4063G11C11/413
Inventor 陈居富许昭顺
Owner WINBOND ELECTRONICS CORP