Wire frame, semiconductor device using such frame and its mfg. method
A manufacturing method and lead frame technology, which are used in semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., can solve the problems of impossible miniaturization, complex manufacturing process, and high cost
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Embodiment 1
[0130] Hereinafter, Embodiment 1 of the present invention will be described with reference to the drawings.
[0131] figure 1 This shows the lead frame in the first embodiment of the present invention, that is, the bottom surface structure of the part including one die pad of the lead frame, and the lead frame is provided with a plurality of die pads with inner inner lead parts before insulation processing.
[0132] Such as figure 1 As shown, the lead frame 10 has the following parts: a frame part 11; inside the frame part 11, the four corners are supported by the support lead part 12 as a connection support part, and the upper surface ( figure 1 The backside of the semiconductor element is held by the die pad portion 13; each is supported by the peripheral portion of the die pad portion 13, a plurality of inner inner lead portions 14A with convex portions 14a on the bottom surface; arranged between the frame portion 11 and the inner inner lead portion 14A Meanwhile, while ext...
Embodiment 2
[0155] Hereinafter, Embodiment 2 of the present invention will be described with reference to the drawings.
[0156] Figure 5 (a) and Figure 5 (b) is a resin-sealed semiconductor device according to Embodiment 2 of the present invention, (a) is a plan view, and (b) shows an enlarged cross-sectional structure of (a) on the line Vb-Vb. in Figure 5 (a) and Figure 5 (b), right and figure 2 with image 3 The structural members that are the same as the structural members shown use the same symbols, and their descriptions are omitted.
[0157] Figure 5 (a) and Figure 5 (b) The resin-sealed semiconductor device 40 of Example 2 shown in figure 2 The lead frame 10 of the illustrated embodiment 1 has a lead frame of the same structure, and both the inner inner lead portion 14A and the outer inner lead portion 14B are changed into two columns, forming a four-row structure.
[0158] Such as Figure 5 As shown in (b), the resin-sealed semiconductor device 40 is composed of the lower p...
Embodiment 3
[0173] Hereinafter, Embodiment 3 of the present invention will be described with reference to the drawings.
[0174] Figure 6 (a) and Figure 6 (b) is the lead frame of embodiment 3 of the present invention, (a) shows the bottom surface structure of a part of a die pad including the lead frame, and the lead frame is provided with a plurality of insulating (isolated) bosses before processing Die pad part; (b) shows the cross-sectional structure on the VIb-VIb line of (a).
[0175] Such as Figure 6 (a) and Figure 6 As shown in (b), the lead frame 30 includes a frame portion 31; it is arranged inside the frame portion 31, and a die pad portion 33 holding a semiconductor element is held thereon; and the die pad portion 33 is respectively arranged at the peripheral portion There are three rows, and the surface (bottom surface) opposite to the element holding surface has a plurality of inner lead portions 34 as convex portions of bosses.
[0176] Among the plurality of inner lead po...
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