Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Voltage allocation mode of piezoelectric scanner for scanning-probe microscope

A scanning probe and configuration technology, applied in the field of scanning probe microscopy, can solve problems such as limited dynamic range, and achieve the effects of improving stability, reducing distortion, and simplifying circuits

Inactive Publication Date: 2003-03-26
NANKAI UNIV
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, since the scanning range of the piezoelectric scanner is limited by the withstand voltage V of the piezoelectric ceramic tube 0 The limitation of the dynamic range is limited

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0006] It is necessary to modify or redesign the commonly used electronic control system of scanning probe microscope. In the existing scanning probe microscope electronic control system, find the sawtooth wave low-voltage signal output terminal that controls the scanning of the X electrode and changes linearly with time, which is divided into two ways: making a general positive high-voltage amplifying circuit (the working power only needs a positive High-voltage regulated power supply), which converts a signal into a positive high-voltage signal V through an amplifying circuit + , to provide voltage for the +X electrode; find the low-voltage signal output terminal that controls the scanning range in the X direction and make a general-purpose low-voltage differential circuit, and convert the other path through the low-voltage differential circuit into a low-voltage signal V + *L =V set L -V + L , and then converted into a high-voltage signal V by the amplifying circuit +...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

In prior art, the opposite electrodes are applied opposite voltages in sign so as to need two sets of voltage stabilization power sources (positive and negative). Thus, the mismatch of two sets of the power sources, the heat drift and noise cause the distortion of scanned image. The technique scheme used in the invention is as follows. The complement collocating mode is used for the electrode. Voltage V+ and V+* are applied to the pair of the electrode. In the scanning process, the electronic control system controls V++V+*=Vset. The Vset is the voltage for controlling the scanning range set for the system. The invention simplifies the circuit, raises the stability of the scanner, reduces the distortion and increases the dynamic scanning range of the scanner.

Description

technical field [0001] The invention relates to a voltage configuration mode designed for simplifying a power supply system of a scanning probe microscope piezoelectric scanner (especially a single-tube piezoelectric ceramic scanner) and improving the performance of the scanner, belonging to the field of scanning probe microscopes. Background technique [0002] At present, the voltage configuration of single-tube piezoelectric ceramic scanners for scanning probe microscopes is usually a four-electrode type. The inner wall of the ceramic tube is an integral electrode (Z electrode), which controls the expansion and contraction in the Z direction. The electrodes on the outer wall are divided into four equal parts with equal areas (+X, -X, +Y, -Y electrodes), and two sets of opposite electrode pairs on the outer wall respectively control the deflection in the X-Y direction, which realizes the scanning function of the scanning probe microscope piezoelectric scanner . Usually, t...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G01Q10/00H01J37/28
Inventor 张天浩吴朝晖张春平张光寅颜彩繁杨嘉孙磊
Owner NANKAI UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com