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Method for precisely machining microstructure

A technology of precision machining and structure, applied in nanostructure manufacturing, semiconductor/solid-state device manufacturing, electrical components, etc., which can solve problems such as imperfect change energy and inability to prevent errors.

Inactive Publication Date: 2003-04-02
PANASONIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, due to photolithography technology, it is impossible to prevent the error generated when adjusting the position of the mask, there is a certain limit to the miniaturization technology of the mask, and there are limits to the accuracy of the etching material due to the imperfect limit of the changing energy of light, etc. Therefore, there are still problems in forming microstructures with a size of tens of nanometers
[0007] Therefore, although there are methods of controlling the photolithography process to a minimum using automatic adjustment technology, etc., these methods cannot completely solve the problems that occur when forming fine structures whose sizes and intervals are uniform.

Method used

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  • Method for precisely machining microstructure
  • Method for precisely machining microstructure
  • Method for precisely machining microstructure

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Experimental program
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Effect test

no. 1 Embodiment approach

[0050] The first embodiment includes: containing iron oxide (all the iron oxides described below are designated as Fe 2 o 3 ) of ferritin is arranged on the substrate, at least using iron oxide dots inside the ferritin as a mask, without using an etching film for precision processing of the substrate. It should be added that the substrate in all the embodiments of the present invention refers to the entire substrate including structures formed on the substrate, such as oxide films and gate electrodes.

[0051] Such as figure 1 As shown schematically, the ferritin used here includes: a spherical core 1 containing about 3,000 atoms of inorganic substances such as iron, and 24 identical subunits (sub units) each having a molecular weight of about 20,000. The metal-protein complex composed of the outer shell 2 formed around the nucleus 1 is mostly contained in the liver and spleen of animals. The outer diameter of ferritin is about 12 nm, and the diameter of the core 1 containe...

no. 2 Embodiment approach

[0089] In the second embodiment, ferritin containing iron oxide is arranged on a substrate for forming an etched film, at least the iron oxide dots inside the ferritin are used as an etched film, and a pattern is drawn on the etched film to form an etched film. Method of substrate etching.

[0090] First, ferritin containing iron oxide was prepared in the same manner as in the first embodiment.

[0091] Next, Fig. 2(a) to Fig. 2(d) are diagrams showing a method of two-dimensionally arranging and immobilizing ferritin on a substrate.

[0092] The buffer solution, purified water, NaCl and other solutions used here were all organic substances removed in advance with an ODS filter.

[0093] In addition, as a preparation, a calix arene (calix arene) having a thickness of 10 nm, for example, is prepared in advance as a positive resist on the silicon substrate to be used. Here, in addition to calixarene, positive etching of methacrylic acid (PMMA), α-methylstyrene resin, novolac, o...

Embodiment approach

[0110] In the third embodiment, the micropillars produced by the microstructure precision machining method of the present invention and the method of manufacturing an optical semiconductor element reported by Eriguchi and others and described in Japanese Patent Laid-Open No. 11-233752 will be described.

[0111] Figure 12 A cross-sectional view showing a semiconductor fine column with a diameter of 6 nm formed in the first or second embodiment.

[0112] In the substrates used in the first and second embodiments, a p-type well 41 is formed on a part of n-type silicon, and an n-type well is further formed on the p-type well 41 . At this time, etching is performed as deep as the inside of the p-type well 41 in the substrate, thereby forming high-density semiconductor fine pillars 32 made of n-type silicon perpendicular to the substrate surface.

[0113] Next, the insulating layer 33 made of silicon oxide film is used to cover the side surfaces of the semiconductor microcolumns ...

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Abstract

A two-dimensional crystalline film of ferritins (4) each holding a nucleus (1) of iron oxide is formed, and a silicon substrate (6) is etched by using at least the nuclei (1) as an etching mask. The diameter of the nuclei (1) is as small as 6 nm, and hence a microstructure can be formed on a substrate. Therefore semiconductor light-emitting devices and various semiconductor devices using the quantum effect can be manufactured.

Description

technical field [0001] The present invention relates to a precision machining method for microstructures, in particular to a method for forming very uniform ultrafine microstructures with a size of about tens of nanometers in high-efficiency production under large-scale industrial production. technical background [0002] At present, in the field of electronic engineering, the development of semiconductor devices is attracting attention. Since these semiconductor elements are miniaturized, the possibility of high integration of the elements is higher, so it is a new goal to manufacture electronic composite elements of extremely small size. [0003] In the past, the manufacture of these sub-micron micro elements was realized by shrinking the general transistor, and the shrinking method was based on the photolithography method. [0004] That is to say, its technical basis is to coat the substrate with an etched film that changes when it is irradiated by light, X-rays, or elec...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/308
CPCH01L21/3088H01L21/3081H01L21/30
Inventor 山下一郎
Owner PANASONIC CORP