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CMOS image sensor

A technology of image sensor and MOS transistor, applied in image communication, TV, color TV components and other directions, can solve problems such as the inability to reduce kTC noise components

Inactive Publication Date: 2003-08-20
SOCIONEXT INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This approach can reduce the kTC noise contribution in the differential amplifier operating band, but cannot reduce the kTC noise contribution in frequencies higher than this band
[0016] Also, in many cases the circuits used to reduce kTC noise are relatively large scale

Method used

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Embodiment Construction

[0029] Embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0030] figure 2 It is a schematic diagram showing the overall structure of the CMOS image sensor according to the present invention.

[0031] Such as figure 2 As shown in , the CMOS image sensor 1 according to the present invention includes a pixel portion 10 in which pixel circuits 10a are arranged in a matrix; a vertical scanning shift register / voltage control circuit 20 for specifying the pixel circuits 10a in the vertical direction and for Controlling the voltage of the reset signal; the amplifier / noise canceling circuit 30 for performing amplification processing on the image signal output from the pixel circuit 10a in each column and reducing the noise therein; and the horizontal scanning shift register 40 for selecting the transistor by the column M41 designates the output from the pixel circuit 10a in the horizontal direction. In addition, an...

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Abstract

A CMOS image sensor that reduces kTC noise in a wide band. A pixel circuit corresponding to one pixel includes a photoelectric conversion element for carrying out the photoelectric conversion of incident light, a reset transistor for resetting a cathode of the photoelectric conversion element to initial voltage, an amplifying transistor for converting electric charges accumulated in the photoelectric conversion element to voltage, and a row selection transistor for selecting signals output from pixel areas arranged in a row direction. A voltage control circuit controls the potential of a gate of the reset transistor during a period when the photoelectric conversion element is reset to change ON-state resistance of the reset transistor. By doing so, a cutoff frequency for a low-pass filter formed in the pixel circuit by ON-state resistance of the reset transistor and parasitic capacitance produced at the cathode on the photoelectric conversion element will be controlled.

Description

technical field [0001] The present invention relates to a CMOS image sensor for obtaining an image by sequentially outputting image signals detected in each pixel area arranged in a matrix according to X-Y addressing, and in particular to a CMOS image sensor capable of reducing kTC noise. Background technique [0002] With the development of digital still cameras and data cameras, camera functions are added to mobile phones and the like, and the demand for solid-state imaging devices has increased in recent years. Charge-coupled devices (CCDs), which are solid-state imaging devices, have been widely used at present. However, CCDs have disadvantages of requiring many power supply circuits, high driving voltage, and high power consumption. Therefore, attention has recently been turned to CMOS image sensors, which can be manufactured by a process for manufacturing complementary metal-oxide transistors (CMOS), can operate at low voltage, consume only a small amount of power, an...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146H04N25/00H04N25/65
CPCH04N5/3575H04N5/363H04N25/616H04N25/65H04N25/77
Inventor 国分政利土屋主税
Owner SOCIONEXT INC