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Monitoring method of wafer surface process microparticles and imperfection

A particle and defect technology, applied in the field of semiconductor process monitoring, can solve the problem of not being able to measure whether the wafer has particles attached to tiny defects, etc.

Inactive Publication Date: 2003-09-17
MACRONIX INT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The object of the present invention is to provide a method for monitoring wafer surface and process particles and defects, so as to solve the problem that when the size of defects or particles on the wafer is smaller than the detection limit of the measuring machine, the wafer cannot be measured. Whether there are particles attached to the circle or whether there is a problem with the formation of small defects

Method used

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  • Monitoring method of wafer surface process microparticles and imperfection
  • Monitoring method of wafer surface process microparticles and imperfection
  • Monitoring method of wafer surface process microparticles and imperfection

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Embodiment Construction

[0016] Figure 1A to Figure 1B , which is a schematic cross-sectional flow diagram of a method for measuring wafer defects according to a preferred embodiment of the present invention.

[0017] Please refer to Figure 1A Firstly, a wafer 100 is provided, wherein the wafer 100 may be a wafer in process or a wafer. And if the wafer 100 is a wafer being processed, the method of the present invention can be used to monitor whether there are particles 102 attached or defects 104 formed on the substantially effective surface of the wafer. If the wafer 100 is a control wafer, the method of the present invention can place the control wafer in a process tool and simulate the process state, so as to monitor the amount of particles 102 and defects 104 that may be generated by the process tool. Wherein, the monitored particles 102 and defects 104 have a size smaller than 0.1 micron.

[0018] After that, please refer to Figure 1B , forming a substantially uniform conformal coating laye...

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Abstract

A monitoring method for detect and particle on the surface of a wafer utilizes a measuring machine stand to detect the defect and particle on the effective surface of wafer by forming an essentially uniform conformed draping layer on the effective surface of the wafer with controlled thickness to properly enlarge the outline of the effective particle and defect on the surface of the wafer before the detection is carried on.

Description

technical field [0001] The present invention relates to a monitoring method of a semiconductor process, and in particular to a monitoring method of wafer surface and process particles (Particles) and defects (Defects). Background technique [0002] Usually, in the process flow of a semiconductor factory, a monitoring station will be set up after some key process steps. The purpose of setting up this monitoring station is to monitor whether there are particles attached or defects formed during the critical process of the wafer. Because in these critical process steps, if particles are attached or defects are formed on the wafer, it may affect the subsequently formed devices. Therefore, it is very important to monitor whether there is particle attachment or defect formation on the wafer. [0003] The known monitoring method for wafer surface and process particles and defects is to directly send the wafer into a measuring machine after the wafer is completed in a specific pro...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/66
Inventor 陈石晏曾昭权
Owner MACRONIX INT CO LTD