Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Schottky shielding dioe with low straightforward voltage drop and its producing method

A manufacturing method and forward voltage technology, applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve problems such as the inability to provide low forward voltage drop

Inactive Publication Date: 2003-10-01
ONIZUKA ELECTRONICS
View PDF0 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this integrated structure cannot provide low forward voltage drop

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Schottky shielding dioe with low straightforward voltage drop and its producing method
  • Schottky shielding dioe with low straightforward voltage drop and its producing method
  • Schottky shielding dioe with low straightforward voltage drop and its producing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0027] The present invention is a Schottky shielded diode (SBD) and a manufacturing method thereof. The manufacturing method of the Schottky shielded diode (SBD) of the present invention can achieve an ultra-low forward voltage without changing the metallization mechanism and metal materials of the Schottky shielded diode (SBD).

[0028] See Figure 6 It is a schematic diagram of the structure of a Schottky shielded diode (SBD) according to a preferred embodiment of the present invention. Such as Figure 6 As shown, the manufacturing method of the Schottky Shielded Diode (SBD) is to first form a plurality of groove structures 61 on the surface of a silicon wafer 60 by etching. Among them, the base material of the silicon wafer 60 is preferably silicon and silicon carbon base materials. After the top metal layer 62 (the uppermost layer of metal) is deposited, the shielding metal layer 63 of the Schottky Shielded Diode (SBD) can then be formed on the surface of the creped silicon wa...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention relates to a method to manufacture a schottky shielding diode, which forms a number of grooves on the base material and also forms a metal layer on the said base material which has a number of groove as well as forms a shielding metal layer between the base material and the metal layer in order to form the schoottky shielding diode.

Description

(1) Technical field [0001] The invention relates to a Schottky shielded diode and a manufacturing method thereof, in particular to a low forward voltage drop Schottky shielded diode and a manufacturing method thereof. (2) Background technology [0002] Recently, Schottky Barrier Diode (SBD) has been widely used in DC-DC converter (DC-DC converter), voltage regulator module (Voltage Regulator Module VRM), telecom transmission / server (Telecom) / Server), Adaptor and Charger, etc. See figure 1 , Which is a schematic diagram of an existing Schottky shielded diode. Such as figure 1 As shown, the manufacturing method of the Schottky shielded diode is to deposit a metal layer 11 on a silicon wafer 10, and the shielding metal 12 of the Schottky shielded diode (SBD) can then be generated on the silicon wafer 10. On the surface. The current transfer mode of the existing Schottky shielding diode is simulated as figure 2 Shown. [0003] In all these applications, Schottky shielded diodes (...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/329H01L29/872
Inventor 曾军周明江吴宗宪
Owner ONIZUKA ELECTRONICS
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com