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Monophyletic mixture of metal oxygen silicide

A technology of silicide and mixture, which is applied in the direction of silicon organic compounds, compounds of group 4/14 elements of the periodic table, metal material coating technology, etc.

Inactive Publication Date: 2004-04-28
AIR PROD & CHEM INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since each of the above liquid metal oxide silicides has a fully defined metal:Si ratio of 1:4 (0.25) or 1:2 (0.5), it makes design a problem

Method used

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  • Monophyletic mixture of metal oxygen silicide

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] With empirical composition Hf(NEt 2 ) 3.15 (OEiEt 3 ) 0.85 synthesis of the parent

[0040] With empirical composition Hf(NEt 2 ) 3.15 (OSiEt 3 ) 0.85 The synthesis of the precursor was carried out by the following method. All manipulations were performed under nitrogen and argon in the absence of moisture and air using standard Schlenk and glove box techniques. In the glove box, weigh Hf(NEt 2 ) 4 (75.71 g, 162.3 mmol) was placed in a 500 ml Schlenk flask equipped with a stir bar. Hexane (-200ml) was added to the flask. will be fitted with HOSiEt 3 An isobaric addition funnel of (21.3 g, 161 mmol) and hexane (-50 ml) was secured to the flask and capped with a glass stopper. The reaction apparatus was removed from the glove box and secured to a Schlenk line.

[0041] Place the reaction flask in a dry ice / isopropanol bath before adding the reactants. The silanol solution was added dropwise to the reaction mixture over 30-45 min. Stirring was continued ove...

Embodiment 2

[0044] With empirical composition Hf(NEt 2 ) 1.66 (OSiEt 3 ) 2.34 synthesis of the parent

[0045] With empirical composition Hf(NEt 2 ) 1.66 (OSiEt 3 ) 2.34 The synthesis of the precursor was carried out by the following method. All manipulations were performed under nitrogen and argon in the absence of moisture and air using standard Schlenk and glove box techniques. In the glove box, weigh Hf(NEt 2 ) 4 (74.96g, 160.7mmol) was placed in a 500ml Schlenk flask equipped with a stir bar. Hexane (-100ml) was added to the flask. will be fitted with HOSiEt 3 (47.5 g, 359 mmol) and hexane (-50 ml) with an isobaric addition funnel secured to the flask and capped with a glass stopper. The reaction apparatus was removed from the glove box and secured to a Schlenk line.

[0046] While cooling the reaction flask in a dry ice / isopropanol bath, the silanol solution was added dropwise to the reaction mixture over about 15 min. Stirring was continued overnight while the flask ...

Embodiment 3

[0048] With empirical composition Hf(OtBu) 3.30 (OSiEt 3 ) 0.70 synthesis of the parent

[0049] With empirical composition Hf(OtBu) 3.30 (OSiEt 3 ) 0.70 The synthesis of the precursor (Hf / Si ratio ~4.7) was carried out by the following method. All manipulations were performed under nitrogen and argon in the absence of moisture and air using standard Schlenk and glove box techniques. In the glove box, weigh Hf(OtBu) 4 (81.80 g, 173.7 mmol) was placed in a 500 ml Schlenk flask equipped with a stir bar. Hexane (-200ml) was added to the flask. will be fitted with HOSiEt 3 (23.01 g, 173.9 mmol) and hexane (-10 mL) an isobaric addition funnel was secured to the flask and capped with a glass stopper. The reaction apparatus was removed from the glove box and secured to a Schlenk line.

[0050] While cooling the reaction flask in a dry ice / isopropanol bath, the silanol solution was added dropwise to the reaction mixture over about 50 min. Stirring was continued overnight w...

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Abstract

This invention pertains to complex mixtures of the formula M is a metal having a valence of from 2-6, L1 is an anionic ligand and L2 is a siloxide or silyl amide ligand suited for producing stable thin-film metal silicates, v is equal to the valence of the metal, and 0 C23C 16 / 40 1 8 3 2003 / 8 / 29 1492073 2004 / 4 / 28 1279210 2006 / 10 / 11 2006 / 10 / 11 2006 / 10 / 11 Air Products and Chemicals, Inc. United R.D. Clark A.K. Huokberg lu xinhua ma chongde 72001 The Company Ltd. of the Chinese Patent Agency (Hong Kong) Zi Building 22, Yingjun Centre, No.23, Gangwan Road, Hong Kong Wanzi United 2002 / 8 / 30 10 / 232052

Description

Background of the invention [0001] The chemical vapor deposition (CVD) method of metal siloxides has been used to deposit stable silicate films on silicon substrates used in the microelectronics industry as insulating materials (high dielectric constant) for gate circuits. A single source metal oxide silicide precursor greatly simplifies production and processing. Typical single-source precursors that have been used in the past include Zr(OSiMe 3 ) 4 , Zr(OSiEt 3 ) 4 , Hf(PSiEt 3 ) 4 , Zr[OSi(OtBu) 3 ] 4 、Hf[OSi(OtBu) 3 ] 4 、(thd) 2 Zr(OSiMe 3 ) 2 and (thd) 2 Hf(OSiMe 3 ) 2 . [0002] Chemical vapor deposition of these single-source metal oxide silicides, while simplifying some aspects of film production, introduces different issues into the design of the process and film composition. For example Zr(OSiMe 3 ) 4 It is solid at room temperature. compound (thd) 2 Zr(OSiMe 3 ) 2 and (thd) 2 Hf(OSiMe 3 ) 2 It is a solid and has the disadvantage of low vola...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C07F7/00C07F7/08C07F7/10C08G77/00C09D1/00C23CC23C16/18C23C16/40C23C16/42H01L21/316
CPCC07F7/0836C23C16/18
Inventor R·D·克拉克A·K·霍克伯格
Owner AIR PROD & CHEM INC