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Holder for semiconductor production system

A technology for manufacturing devices and holding bodies, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc. It can solve the problems of unqualified products, leakage, aging of resistance heating elements, etc., and achieve the purpose of suppressing the drop of temperature and reducing cost. , Improve the effect of heat uniformity

Inactive Publication Date: 2004-12-22
SUMITOMO ELECTRIC IND LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, there is a possibility that the lead wires may contact each other in the supporting member and leakage may occur.
In addition, when the internal pressure of the cylindrical support member is at atmospheric pressure, sparks rarely occur between the electrode terminals and the lead-out wires, but sparks often occur between the electrode terminals and the lead-out wires in a decompressed atmosphere or vacuum state.
[0009] If leakage and sparks occur, the manufacturing process will be temporarily stopped, or the product being processed will become defective, and the resistance heating element embedded in the ceramic heater will also deteriorate, or the electrode terminals and lead wires will be connected. Parts are prone to cracks and cause failures

Method used

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  • Holder for semiconductor production system
  • Holder for semiconductor production system
  • Holder for semiconductor production system

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0043] Adding yttrium oxide (Yttria) as a sintering aid to aluminum nitride (AlN) powder 2 o 3 ) 0.5% by weight, after adding an organic binder to disperse and mix, carry out granulation by spray drying. The granulated powder was molded with a uniaxial press, and sintered to obtain two disk-shaped compacts with a size of 350 mm in diameter and 5 mm in thickness. In addition, add sintering aids with the same composition to the same AlN powder, then add organic binders, dispersants, and solvents for extrusion, knead and extrude the resulting kneaded mixture, and obtain 2 diameters after sintering. It is a tubular molded body with an outer diameter of 10 mm x an inner diameter of 8 mm x a length of 100 mm.

[0044] The above-mentioned two disc shaped bodies and two tubular shaped bodies were degreased in a nitrogen flow at 900°C, and further sintered at 1900°C for 5 hours in a nitrogen flow. The thermal conductivities of the obtained AlN sintered bodies were all 180 W / mK. The...

Embodiment 2

[0052] Such as figure 2 As shown, the other end of the insulating tube 5 made of AlN is extended through the bottom surface of the processing chamber 8, and the other end side of the insulating tube 5 and the bottom surface of the processing chamber 8 are hermetically sealed with an O-ring. In Example 1, a device was constructed in the same manner. On the device constructed as described above implemented and

[0053] Same evaluation as Example 1.

[0054] The ceramic holder was heated to 500°C under the same conditions as in Example 1. At this time, even if the power was turned on and off 500 times, there was no failure such as sparks between the electrode terminals and the lead wires. In addition, even if the temperature was raised and lowered 500 times, no problem occurred in any of the 10 ceramic holders. In addition, the thermal uniformity of the ceramic holder was 500° C.±0.46%.

Embodiment 3

[0056] Such as image 3 As shown, the apparatus was configured in the same manner as in Example 2, except that two AlN insulating tubes 5a and 5b having different diameters were fitted and used as the insulating tubes. In addition, the dimensions of the insulating tube 5a are 12 mm in outer diameter, 10.5 mm in inner diameter, and 60 mm in length. In addition, the dimensions of the insulating tube 5b are 10 mm in outer diameter, 8 mm in inner diameter, and 60 mm in length.

[0057] The device constructed as above was evaluated under the same conditions as in Example 1. That is, when the holder made of ceramics was heated to 500° C., and then the power was turned on and off 500 times, no troubles such as sparks occurred between the electrode terminals and the lead wires. In addition, even if the temperature was raised and lowered 500 times, no problem occurred in any of the 10 ceramic holders. In addition, the thermal uniformity of the ceramic holder was 500° C.±0.46%.

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Abstract

A holder for semiconductor manufacturing equipment is provided, in which electrical leakage and sparks do not occur across the electrode terminals and lead wires to supply power to a resistive heating element embedded in a holder, and the thermal uniformity in the holder is within + / -1.0%. <??>The holder for semiconductor manufacturing equipment, that is provided in a chamber to which reactive gas is supplied, comprises a ceramic holder 1 which holds a treated material 10 on a surface thereof and is provided with a resistive heating element 2 for heating the material to be treated, and a support member 6 one end of which supports the ceramic holder 1 at a position other than the surface holding the material to be treated, and the other end of which is fixed to the chamber. Electrode terminals 3 and lead wires 4 of the resistive heating element 2 provided at a portion other than the surface of the ceramic holder 1 holding the material to be treated are housed within an insulating tube 5 in the holder 1 for the semiconductor manufacturing equipment.

Description

technical field [0001] The present invention relates to a holder for a semiconductor manufacturing device. In particular, it relates to a heating device used for thermal curing of resin films in coater-developers for photolithography and thermal firing of low dielectric constant insulating films such as Low-k films. Background technique [0002] In semiconductor manufacturing, Al circuits and Cu circuits on silicon chips are formed by Al sputtering and Cu plating. to narrow. [0003] The wiring patterns of the Al circuit and the Cu circuit can be formed by photolithography. For example, after uniformly coating resin on the Al film, use an exposure device called a stepper exposure device to print a pattern on the resin film, and remove unnecessary parts after the resin film is heated and cured, and then the wiring can be made. A resin film having a removal pattern is formed on the Al film used. Afterwards, the Al film is etched along the missing pattern with an etching de...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/00H01L21/687
CPCH01L21/68792H01L21/67103H01L21/02H01L21/68H05B3/02
Inventor 柊平启夏原益宏仲田博彦
Owner SUMITOMO ELECTRIC IND LTD
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