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Substrate holder

A technology of substrate and support structure, applied in the direction of gaseous chemical plating, crystal growth, coating, etc., can solve the problems of undisclosed substrate deposition of semiconductor materials, etc.

Active Publication Date: 2004-12-29
OSRAM OPTO SEMICON GMBH & CO OHG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Measures to uniformize the temperature of the substrate surface and the emission wavelength of the deposited semiconductor material have not been disclosed so far

Method used

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Examples

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Embodiment Construction

[0032] In the drawings, the same or similar parts are given the same reference numerals. For better understanding, the drawings are not drawn to scale.

[0033] The substrate holder 1 shown in FIGS. 1A and 1B has a guide groove 4 on the bottom surface of the substrate holder around the edge. The substrate 1 is made of, for example, SiC material and has a thickness of about 7 mm. The guide groove 4 can also be arranged in on the upper surface of the substrate holder. The guide groove has, for example, a depth of 3.5 mm and a width of about 2.5 mm, which width can also be up to 80% of the radius of the substrate holder, the cross-section of the guide groove being quadrilateral. Depending on the temperature profile, the size and cross-section of the guide grooves 4 are variable in order to obtain as uniform a temperature distribution as possible on the substrate holder 1 . A substrate 2 is placed on a substrate holder 1 on which the semiconductor material is deposited. Below t...

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Abstract

In order to achieve an as uniform as possible temperature over the entire surface of the substrate (2) during a temperature step and, in particular, during an epitaxy method, temperature equalization structures are incorporated in a substrate holder (1), on which the substrate (2) is located. A uniform temperature distribution on the substrate surface during the deposition of a semiconductor material reduces the emission wavelength gradient of the deposited semiconductor material. The temperature equalization structures produce specific temperature inhomogeneities in the substrate holder (1), and these smooth out the temperature profile of the substrate (2). For example, a groove (4) with a cooling effect and a support step (5) which produces a gap (8) between the substrate (2) and the substrate holder (1) are integrated in the edge area of the substrate holder (1).

Description

technical field [0001] The invention relates to a substrate holder, in particular for a device for epitaxial deposition of semiconductor material on a substrate, the substrate holder having a substrate mounting surface and a holding back surface opposite the mounting surface, and a 26. An apparatus for semiconductor material deposition according to the preamble of claim 26. Background technique [0002] This patent application claims priority from German patent application 10261362.1-43, the disclosure content of which is incorporated by reference for this purpose. [0003] This substrate holder is placed in a metal organic vapor deposition apparatus (MOVPE), the substrate holder made of graphite has a SiC coating for the deposition of nitrogen compounds, and the substrate is placed on the SiC coating. [0004] The disadvantage of this type of substrate holder is that, during deposition, temperature inhomogeneity occurs on the surface of the substrate when the temperature i...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/458C30B25/12
CPCC23C16/4581C23C16/4583C30B25/12
Inventor S·巴德M·比得A·瓦尔特V·赫尔勒
Owner OSRAM OPTO SEMICON GMBH & CO OHG