Sputter source, sputtering device, and sputtering method

Abstract

When sputtering a target 15, each target 15 is moved with respect to the substrate 10. Therefore, the entire area of the substrate 10 faces the target 15 at sputtering, which enables the formation of the film with a uniform quality on the surface of the substrate 10. At sputtering, not only the target 15 but also a magnetic field-forming unit 25 are moved with respect to the target 15, so a large area of the target 15 can be sputtered. If the magnetic field-forming unit 25 is moved with respect to the substrate 10, an extensively sputtered area of the target 15 is moved with respect to the substrate 10, which yields a more uniform quality distribution in the film formed on the substrate 10.

Description

technical field [0001] The invention relates to a magnetron sputtering device. Background technique [0002] In recent years, with the increase in the size of the substrate as the object of film formation, the sputtering source is also required to be increased in size, but it is difficult to increase the size of the target, such as Figure 6 As shown, a sputtering source 103 with a plurality of small targets 115 is therefore considered. The targets 115 of the sputtering source 103 are juxtaposed on the same plane, and the anode electrodes 113 are disposed between the targets 115 . [0003] The surface of each target 115 is opposed to the substrate as the object of film formation, and the magnetic field forming device 125 is respectively arranged on the back side, and the sputtering gas is introduced into the vacuum chamber in which the sputtering source 103 is placed, and each anode electrode 113 is placed at the ground potential. In a state where voltage is applied to each...

AI Technical Summary

Problems solved by technology

Like this, with the sputtering source of prior art, the film quality deviation of the formed film is big, it is difficult to form the thin film of film quality uniform on the large substrate.

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